BCV49E6327HTSA1
BCV49E6327HTSA1 Datasheet
• For general AF applications<br>• High collector current<br>• High current gain<br>• Complementary types BCV28, BCV48 PNP<br>• Pb-free RoHS compliant package<br>• Qualified according AEC Q101
| Part | Datasheet |
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BCV49E6327HTSA1 |
BCV49E6327HTSA1 (pdf) |
| Related Parts | Information |
|---|---|
BCV49H6327XTSA1 |
BCV49H6327XTSA1 |
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BCV29H6327XTSA1 |
BCV29H6327XTSA1 |
BCV29E6327HTSA1 |
BCV29E6327HTSA1 |
| PDF Datasheet Preview |
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| NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types BCV28, BCV48 PNP • Pb-free RoHS compliant package • Qualified according AEC Q101 BCV29, BCV49 Type BCV29 BCV49 Marking EF EG Maximum Ratings Parameter Collector-emitter voltage BCV29 BCV49 Collector-base voltage BCV29 BCV49 Emitter-base voltage Collector current Peak collector current, tp 10 ms Base current Peak base current Total power dissipationTS 130 °C Junction temperature Storage temperature Pin Configuration Package SOT89 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value Unit -65 150 2011-10-05 BCV29, BCV49 Thermal Resistance Parameter Value Junction - soldering point1 RthJS 1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance Calculation Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCV29 IC = 10 mA, IB = 0 , BCV49 V BR CEO Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCV29 IC = 100 µA, IE = 0 , BCV49 V BR CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 V BR EBO 10 Collector-base cutoff current VCB = 30 V, IE = 0 , BCV29 VCB = 60 V, IE = 0 , BCV49 VCB = 30 V, IE = 0 , TA = 150 °C, BCV29 VCB = 60 V, IE = 0 , TA = 150 °C, BCV49 ICBO Emitter-base cutoff current |
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