MIO1200-33E11

MIO1200-33E11 Datasheet


MIO 1200-33E11

Part Datasheet
MIO1200-33E11 MIO1200-33E11 MIO1200-33E11 (pdf)
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Advanced Technical Information

MIO 1200-33E11

IGBT Module Single switch

Short Circuit SOA Capability Square RBSOA

IC80
= 1200 A

VCES
= 3300 V

VCE sat typ. = V

IGBT Symbol VCES VGES IC80 ICM tSC

VCE sat

VGE th ICES
tFeatures

Conditions
u VGE = 0 V o TC = 80°C - tp = 1 ms TC = 80°C

VCC = 2500 V VCEM CHIP = < 3300 V;
e VGE < 15 V TVJ < 125°C

Maximum Ratings
3300
± 20
1200
2400
a s Conditions

Characteristic Values TVJ = 25°C, unless otherwise specified
min. typ. max.
• IGBT - Low-loss - Smooth switching waveforms for good EMC
• Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance
• AC power converters for - industrial drives - windmills - traction
• LASER pulse generator
h IC = 1200 A VGE = 15 V TVJ = 25°C TVJ = 125°C
p IC = 240 mA VCE = VGE

VCE = 3300 V VGE = 0 V TVJ = 125°C
120 mA

IGES

VCE = 0 V VGE = ± 20 V TVJ = 125°C
500 nA

Inductive load TVJ = 125°C VGE = ±15 V;
1750

Eoff

VCC = 1800V IC = 1200A RG = = 100nH
2000
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Datasheet ID: MIO1200-33E11 644377