BCP 68-25 E6327

BCP 68-25 E6327 Datasheet

• For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type BCP69 PNP • Pb-free RoHS compliant package1 • Qualified according AEC Q101

Part	Datasheet
BCP 68-25 E6327	BCP 68-25 E6327 (pdf)

Related Parts	Information
BCP 68-25 H6327	BCP 68-25 H6327

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NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type BCP69 PNP • Pb-free RoHS compliant package1 • Qualified according AEC Q101 BCP68-25 Type BCP68-25 Marking Pin Configuration 1=B 2=C 3=E 4=C - Package SOT223 * Marking is the same as the type-name Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp 10 ms Base current Peak base current Total power dissipationTS 114 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC ICM IB IBM Ptot Tj Tstg 1Pb-containing package may be available upon special request Value Unit -65 150 2008-10-10 BCP68-25 Thermal Resistance Parameter Junction - soldering point1 Symbol RthJS Value Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V BR CEO 20 V BR CBO 25 V BR CES 25 V BR EBO 5 Collector-base cutoff current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 °C DC current gain2 IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V IC = 1 A, VCE = 1 V I CBO hFE - 100 160 250 375 Collector-emitter saturation voltage2 IC = 1 A, IB = 100 mA Base-emitter voltage2 IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V VCEsat

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NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type BCP69 PNP
• Pb-free RoHS compliant package1
• Qualified according AEC Q101

BCP68-25

Type BCP68-25

Marking

Pin Configuration
1=B 2=C 3=E 4=C -

Package SOT223
* Marking is the same as the type-name

Maximum Ratings

Parameter

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp 10 ms Base current Peak base current Total power dissipationTS 114 °C Junction temperature Storage temperature

VCEO VCES VCBO VEBO IC ICM IB IBM Ptot

Tj Tstg
1Pb-containing package may be available upon special request

Value

Unit
-65 150
2008-10-10

BCP68-25

Thermal Resistance Parameter Junction - soldering point1

Symbol RthJS

Value

Unit

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0

V BR CEO 20

V BR CBO 25

V BR CES 25

V BR EBO 5

Collector-base cutoff current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 °C DC current gain2 IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V IC = 1 A, VCE = 1 V

I CBO hFE
- 100
160 250 375

Collector-emitter saturation voltage2 IC = 1 A, IB = 100 mA Base-emitter voltage2 IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V

VCEsat

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Datasheet ID: BCP68-25E6327 637622