IRGP6660D-EPBF
IRGP6660D-EPBF Datasheet
IRGP6660DPbF IRGP6660D-EPbF
| Part | Datasheet |
|---|---|
IRGP6660D-EPBF |
IRGP6660D-EPBF (pdf) |
| Related Parts | Information |
|---|---|
IRGP6660DPBF |
IRGP6660DPBF |
| PDF Datasheet Preview |
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| VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ max = 175°C VCE ON typ. = 1.7V IC = 48A Applications • Welding • H Bridge Converters IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode n-channel G Gate IRGP6660DPbF TO-247AC C Collector IRGP6660D-EPbF TO-247AD E Emitter Features Low VCE ON and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE ON temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications Optimized for welding and H bridge converters Improved reliability due to rugged hard switching performance and higher power capability Enables short circuit protection scheme Excellent current sharing in parallel operation Environmentally friendly Base part number IRGP6660DPBF IRGP6660D-EPBF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP6660DPBF IRGP6660D-EPBF Absolute Maximum Ratings Parameter Max. VCES Collector-to-Emitter Voltage IC TC = 25°C Continuous Collector Current IC TC = 100°C Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V IFRM TC = 100°C Diode Repetitive Peak Forward Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage |
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