SEP8706-002

SEP8706-002 Datasheet


SEP8706

Part Datasheet
SEP8706-002 SEP8706-002 SEP8706-002 (pdf)
Related Parts Information
SEP8706-003 SEP8706-003 SEP8706-003
SEP8706-001 SEP8706-001 SEP8706-001
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SEP8706

AlGaAs Infrared Emitting Diode

FEATURES
• Side-looking plastic package
• nominal beam angle
• 880 nm wavelength
• Higher output power than GaAs at equivalent
drive currents
• Mechanically and spectrally matched to

SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

The SEP8706 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.

INFRA-20.TIF

OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals
2 plc decimals

DIM_071.ds4

Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.

SEP8706

AlGaAs Infrared Emitting Diode

ELECTRICAL CHARACTERISTICS PARAMETER

SYMBOL MIN TYP MAX UNITS

TEST CONDITIONS

ABSOLUTE MAXIMUM RATINGS

Free-Air Temperature unless otherwise noted

Continuous Forward Current
50 mA

Power Dissipation
100 mW [À]

Operating Temperature Range

Storage Temperature Range

Soldering Temperature 5 sec

Notes Derate linearly from free-air temperature at the rate of

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and
supply the best products possible.

SEP8706

AlGaAs Infrared Emitting Diode

Fig. 1 Radiant Intensity vs Angular Displacement
gra_030.ds4

Relative intensity
-60 -45 -30 -15 0 +15 +30 +45 +60

Angular displacement - degrees

Fig. 3 Forward Voltage vs Forward Current
gra_201.ds4

Forward voltage - V
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Datasheet ID: SEP8706-002 636533