SEP8706
Part | Datasheet |
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SEP8706-002 (pdf) |
Related Parts | Information |
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SEP8706-003 |
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SEP8706-001 |
PDF Datasheet Preview |
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SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger The SEP8706 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. INFRA-20.TIF OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals 2 plc decimals DIM_071.ds4 Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8706 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS Free-Air Temperature unless otherwise noted Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Operating Temperature Range Storage Temperature Range Soldering Temperature 5 sec Notes Derate linearly from free-air temperature at the rate of SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8706 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement gra_030.ds4 Relative intensity -60 -45 -30 -15 0 +15 +30 +45 +60 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current gra_201.ds4 Forward voltage - V |
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