MSRT20060(A)
MSRT20060(A) Datasheet
MSRT20060 A thru MSRT200100 A
| Part | Datasheet |
|---|---|
MSRT20060(A) |
MSRT20060(A) (pdf) |
| Related Parts | Information |
|---|---|
MSRT200100(A) |
MSRT200100(A) |
MSRT20080(A) |
MSRT20080(A) |
| PDF Datasheet Preview |
|---|
| Silicon Standard Recovery Diode Features • High Surge Capability • Types up to 1600 V VRRM MSRT20060 A thru MSRT200100 A VRRM = 600 V - 1600 V IF = 200 A Three Tower Package ts.com Maximum ratings, at Tj = 25 °C, unless otherwise specified n Parameter Conditions Continuous forward current p Surge non-repetitive forward current, Half Sine Wave m Operating temperature o Storage temperature VRRM VRMS VDC IF,SM Tj Tstg TC 140 °C TC = 25 °C, tp = ms MSRT20060 A 600 424 600 200 3000 -40 to 175 -40 to 175 ec Electrical characteristics, at Tj = 25 °C, unless otherwise specified lin Parameter Diode forward voltage Symbol VF IR Conditions IF = 200 A, Tj = 25 °C VR = 600 V, Tj = 25 °C VR = 600 V, Tj = 150 °C MSRT20060 A MSRT20080 A 800 566 800 200 3000 -40 to 175 -40 to 175 MSRT20080 A 10 5 Thermal characteristics Thermal resistance, junction case RthJC MSRT200100 A 1000 707 1000 200 3000 -40 to 175 -40 to 175 MSRT200100 A 10 5 Unit V A °C °C Unit V uA mA °C/W MSRT20060 A thru MSRT200100 A onlinecomponents.com |
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