KSC2710YBU

KSC2710YBU Datasheet

KSC2710

Part	Datasheet
KSC2710YBU	KSC2710YBU (pdf)

Related Parts	Information
KSC2710GTA	KSC2710GTA
KSC2710YTA	KSC2710YTA
KSC2710GBU	KSC2710GBU

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KSC2710 KSC2710 Low Frequency Power Amplifier • Complement to KSA1150 • Collector Dissipation PC=300mW TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 5 500 300 150 -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=0.1A IC=0.5A, IB=50mA Min. 40 20 5 Typ. hFE Classification Classification hFE Y 120 ~ 240 G 200 ~ 400 Units V mA mW °C °C Max. Units V µA µA 2004 Fairchild Semiconductor Corporation KSC2710 Typical Characteristics IC[mA], COLLECTOR CURRENT VBE sat , VCE sat [V], SATURATION VOLTAGE 500 400 300 200 100 IB = 2.0mA IB = 1.8mA IB = 1.6mA IB = 1.4mA IB = 1.2mA IB = 1.0mA IB = 0.8mA IB = 0.6mA IB = 0.4mA IB = 0.2mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Static Characteristic VBE sat VCE sat IC=10IB

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KSC2710

KSC2710

Low Frequency Power Amplifier
• Complement to KSA1150
• Collector Dissipation PC=300mW

TO-92S
1.Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Ratings 40 20 5 500 300 150
-55 ~ 150

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage

IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=0.1A IC=0.5A, IB=50mA

Min. 40 20 5

Typ.
hFE Classification

Classification hFE

Y 120 ~ 240

G 200 ~ 400

Units V mA
mW °C °C

Max.

Units V µA µA
2004 Fairchild Semiconductor Corporation

KSC2710

Typical Characteristics

IC[mA], COLLECTOR CURRENT

VBE sat , VCE sat [V], SATURATION VOLTAGE
500 400 300 200 100

IB = 2.0mA IB = 1.8mA IB = 1.6mA IB = 1.4mA IB = 1.2mA IB = 1.0mA IB = 0.8mA IB = 0.6mA IB = 0.4mA IB = 0.2mA

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure Static Characteristic

VBE sat

VCE sat

IC=10IB

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Datasheet ID: KSC2710YBU 634194