MBR40045CTS
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MBR40045CTS (pdf) |
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Silicon Power Schottky Diode • High Surge Capability Package MBR40045CTS VRRM IF = 45 V = 400 A Pin 1 Pin 3 SOT 227 Pin 2 Pin 4 Maximum Ratings at Tj = 125 °C, unless otherwise specified Storage temperature VRRM VRMS VDC IF Tj Tstg Conditions TC 85 °C Electrical Characteristics at Tj = 125 °C, unless otherwise specified Per Leg Symbol VF IR C Conditions IF = 200 A, Tj = 25 °C IF = 200 A, Tj = 125 °C VR = 36 V, Tj = 25 °C VR = 36 V, Tj = 125 °C VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 20 V, f = 1 MHz, Tj = 25 °C VR = 45 V, f = 1 MHz, Tj = 25 °C Thermal Characteristics Thermal resistance, junction - case RthJC Values 45 32 45 400 -40 to 175 -40 to 175 min. Values typ. 1 835 4910 1399 1032 max. 5 2500 Unit V A °C °C Unit V µA °C/W Figure 1 Typical Forward Characteristics Per Leg Mar 2012 Pg1 of 3 MBR40045CTS Package Dimensions: SOT-227 |
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