VTB Process Photodiode
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VTB8440BH (pdf) |
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VTB8441BH |
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VTB Process Photodiode VTB8440BH, 8441BH PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response. CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA in2 mm2 ABSOLUTE MAXIMUM RATINGS Storage Temperature Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS 25°C See also VTB curves, pages 21-22 CHARACTERISTIC TEST CONDITIONS ISC TC ISC VOC TC VOC ID RSH TC RSH CJ λrange λp VBR NEP Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 VTB8440BH Min. Typ. Max. 2000 ±50 x 10-13 Typ. x 10 12 Typ. VTB8441BH Min. Typ. Max. ±50 x 10-14 Typ. x 10 12 Typ. UNITS µA %/°C mV/°C pA %/°C nF nm V Degrees W Hz cm Hz W PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone 877-734-6786 Fax 450-424-3413 |
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