VTB8440BH

VTB8440BH Datasheet


VTB Process Photodiode

Part Datasheet
VTB8440BH VTB8440BH VTB8440BH (pdf)
Related Parts Information
VTB8441BH VTB8441BH VTB8441BH
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VTB Process Photodiode

VTB8440BH, 8441BH

PACKAGE DIMENSIONS inch mm

PRODUCT DESCRIPTION

Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.

CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA in2 mm2

ABSOLUTE MAXIMUM RATINGS

Storage Temperature Operating Temperature:
-20°C to 75°C -20°C to 75°C

ELECTRO-OPTICAL CHARACTERISTICS 25°C See also VTB curves, pages 21-22

CHARACTERISTIC

TEST CONDITIONS

ISC TC ISC VOC TC VOC

ID RSH TC RSH CJ λrange λp VBR NEP

Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity

H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0

VTB8440BH

Min. Typ. Max.
2000
±50 x 10-13 Typ. x 10 12 Typ.

VTB8441BH

Min. Typ. Max.
±50 x 10-14 Typ. x 10 12 Typ.

UNITS
µA %/°C mV/°C pA %/°C nF nm

V Degrees W Hz cm Hz W

PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone 877-734-6786 Fax 450-424-3413
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Datasheet ID: VTB8440BH 512951