ZXMP3F35N8TA

ZXMP3F35N8TA Datasheet

ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET

Part	Datasheet
ZXMP3F35N8TA	ZXMP3F35N8TA (pdf)

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DISCONTINUED ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET V BR DSS V -30 RDS on VGS=-10V VGS=-4.5V Features • Low on-resistance • Low gate drive • SO8 package Ordering information Device ZXMP3F35N8TA Reel size inches Tape width mm Quantity per reel Top view Device marking ZXMP 3F35 Issue 1 - August 2008 Diodes Incorporated 2008 DISCONTINUED ZXMP3F35N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage b Continuous Drain current VGS= -10V TA=25°C VGS= -10V TA=70°C b a VGS= -10V TA=25°C d VGS= -10V TL=25°C Pulsed Drain current c Continuous Source current Body diode b Pulsed Source current Body diode c Power dissipation at TA =25°C a Linear derating factor b Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C d Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD Tj, Tstg Limit -30 ±20 -55 to 150 Unit V A W mW/°C W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient a b Junction to ambient d Junction to lead Value 80 45 Unit °C/W °C/W °C/W a For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. b Mounted on FR4 PCB measured at t 10 sec. c Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us pulse width limited by maximum junction temperature. d Thermal resistance from junction to solder-point at the end of the drain lead . Issue 1 - August 2008 Diodes Incorporated 2008 DISCONTINUED Thermal characteristics ZXMP3F35N8

PDF Datasheet Preview

DISCONTINUED

ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET

V BR DSS V -30

RDS on VGS=-10V VGS=-4.5V

Features
• Low on-resistance
• Low gate drive
• SO8 package
Ordering information

Device ZXMP3F35N8TA

Reel size inches

Tape width mm

Quantity per reel

Top view

Device marking ZXMP 3F35

Issue 1 - August 2008

Diodes Incorporated 2008

DISCONTINUED

ZXMP3F35N8

Absolute maximum ratings

Parameter

Drain-Source voltage

Gate-Source voltage
b Continuous Drain current VGS= -10V TA=25°C

VGS= -10V TA=70°C b a

VGS= -10V TA=25°C d

VGS= -10V TL=25°C Pulsed Drain current c Continuous Source current Body diode b Pulsed Source current Body diode c Power dissipation at TA =25°C a Linear derating factor
b Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C d Linear derating factor

Operating and storage temperature range

Symbol VDSS VGS ID

IDM IS ISM PD Tj, Tstg

Limit -30 ±20
-55 to 150

Unit V

A W mW/°C W mW/°C W mW/°C °C

Thermal resistance

Parameter Junction to ambient a
b Junction to ambient
d Junction to lead

Value 80 45

Unit °C/W °C/W °C/W
a For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
b Mounted on FR4 PCB measured at t 10 sec. c Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us pulse width limited by maximum junction
temperature. d Thermal resistance from junction to solder-point at the end of the drain lead .

Issue 1 - August 2008

Diodes Incorporated 2008

DISCONTINUED

Thermal characteristics

ZXMP3F35N8

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Datasheet ID: ZXMP3F35N8TA 510267