ZXMN3A02N8TC
ZXMN3A02N8TC Datasheet
ZXMN3A02N8
| Part | Datasheet |
|---|---|
ZXMN3A02N8TC |
ZXMN3A02N8TC (pdf) |
| PDF Datasheet Preview |
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| NOT RECOMMEND FOR NEW DESIGN ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V RDS ON = ID = 9.0A D This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching E speed. This makes them ideal for high efficiency, low voltage, power management applications. D FEATURES N • Low on-resistance E N • Fast switching speed M IG • Low threshold • Low gate drive M S • Low profile SOIC package O E APPLICATIONS C D • Disconnect switches E • Motor control R W ORDERING INFORMATION E DEVICE T N ZXMN3A02N8TA O ZXMN3A02N8TC REEL SIZE 7” 13” TAPE QUANTITY WIDTH PER REEL 12mm 500 units 12mm 2500 units N R DEVICE MARKING O • ZXMN F 3A02 SO8 PINOUT Top View ISSUE 4 - JANUARY 2005 1 ZXMN3A02N8 SEMICONDUCTORS August 2015 Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN ZXMN3A02N8 ABSOLUTE MAXIMUM RATINGS. PARAMETER LIMIT UNIT Drain-Source Voltage VDSS Gate Source Voltage Continuous Drain Current VGS=-10V TA=25°C b ID VGS=-10V TA=70°C b VGS=-10V TA=25°C a Pulsed Drain Current c Continuous Source Current Body Diode b D Pulsed Source Current Body Diode c E Power Dissipation at TA=25°C a Linear Derating Factor Power Dissipation at TA=25°C b D Linear Derating Factor Operating and Storage Temperature Range IDM IS ISM PD Tj:Tstg 44 20 -55 to +150 W mW/°C W mW/°C MENIGN THERMAL RESISTANCE PARAMETER VALUE |
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