FDI2532
FDI2532 Datasheet
FDB2532 / FDP2532 / FDI2532
| Part | Datasheet |
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FDI2532 |
FDI2532 (pdf) |
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| FDB2532 / FDP2532 / FDI2532 August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel MOSFET 150V, 79A, • rDS ON = Typ. , VGS = 10V, ID = 33A • Qg tot = 82nC Typ. , VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Qualified to AEC Q101 Formerly developmental type 82884 • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems DRAIN FLANGE SOURCE GATE DRAIN DRAIN FLANGE SOURCE DRAIN GATE GATE TO-220AB FDP SERIES SOURCE TO-263AB FDB SERIES DRAIN FLANGE TO-262AB FDI SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 10V Continuous Tamb = 25oC, VGS = 10V, = 43oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-220, TO-263, TO-262 Thermal Resistance Junction to Ambient TO-220, TO-262 Note 2 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area Ratings 150 ±20 79 56 8 Figure 4 400 310 -55 to 175 62 43 Units V A mJ W/oC oC/W oC/W oC/W Package Marking and Ordering Information Device Marking FDB2532 FDP2532 FDI2532 Device FDB2532 FDP2532 FDI2532 Package TO-263AB TO-220AB TO-262AB Reel Size 330mm Tube Tape Width 24mm N/A N/A Quantity 800 units 50 units 50 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 120V VGS = 0V TC = 150oC - VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 33A, VGS = 10V rDS ON Drain to Source On Resistance ID = 16A, VGS = 6V, ID = 33A, VGS = 10V, TC = 175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 75V ID = 33A Ig = 1.0mA Resistive Switching Characteristics VGS = 10V Turn-On Time td ON tr td OFF tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDD = 75V, ID = 33A |
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