ZXM66P03N8TA

ZXM66P03N8TA Datasheet

ZXM66P03N8

Part	Datasheet
ZXM66P03N8TA	ZXM66P03N8TA (pdf)

PDF Datasheet Preview
NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET ZXM66P03N8 SUMMARY V BR DSS=-30V RDS ON =0.025 ID=-7.9A This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE ZXM66P03N8TA 7” ZXM66P03N8TC 13” DEVICE MARKING • ZXM 66P03 TAPE WIDTH 12mm QUANTITY PER REEL 500 units 2500 units 4 3 21 5 6 78 Top View ISSUE 1 - JANUARY 2006 1 SEMICO NDUC TORS ZXM66P03N8 ABSOLUTE MAXIMUM RPAARTAMINETGERS Drain-Source Voltage Gate- Source Voltage Continuous Drain Current VGS=-10V TA=25°C b VGS=-10V TA=70°C b VGS=-10V TA=25°C a Pulsed Drain Current c Continuous Source Current Body Diode b Pulsed Source Current Body Diode c Power Dissipation at TA=25°C a Linear Derating Factor Power Dissipation at TA=25°C b Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID IDM IS ISM PD Tj:Tstg LIMIT ±20 -55 to +150 UNIT V A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER VALUE UNIT Junction to Ambient a °C/W Junction to Ambient b °C/W NOTES a For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions b For a device surface mounted on FR4 PCB measured at secs. c Repetitive rating 25mm x 25mm FR4 PCB, D = pulse width 101-s - pulse width limited by maximum junction temperature. SEMICONDUCTORS ISSUE 1 - JANUARY 2006 2

PDF Datasheet Preview

NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SSS
30V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXM66P03N8

SUMMARY V BR DSS=-30V RDS ON =0.025 ID=-7.9A

This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package

APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION

DEVICE

REEL SIZE

ZXM66P03N8TA
7”

ZXM66P03N8TC
13”

DEVICE MARKING
• ZXM 66P03

TAPE WIDTH
12mm

QUANTITY PER REEL
500 units
2500 units
4 3 21 5 6 78

Top View

ISSUE 1 - JANUARY 2006 1

SEMICO NDUC TORS

ZXM66P03N8

ABSOLUTE MAXIMUM RPAARTAMINETGERS

Drain-Source Voltage Gate- Source Voltage Continuous Drain Current VGS=-10V TA=25°C b

VGS=-10V TA=70°C b VGS=-10V TA=25°C a Pulsed Drain Current c Continuous Source Current Body Diode b Pulsed Source Current Body Diode c Power Dissipation at TA=25°C a Linear Derating Factor Power Dissipation at TA=25°C b Linear Derating Factor Operating and Storage Temperature Range

SYMBOL VDSS VGS ID

IDM IS ISM PD

Tj:Tstg

LIMIT
±20
-55 to +150

UNIT V A

A W mW/°C W mW/°C °C

THERMAL RESISTANCE

PARAMETER

VALUE

UNIT

Junction to Ambient a
°C/W

Junction to Ambient b
°C/W

NOTES a For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions b For a device surface mounted on FR4 PCB measured at secs. c Repetitive rating 25mm x 25mm FR4 PCB, D = pulse width 101-s - pulse width limited by maximum junction temperature.

SEMICONDUCTORS

ISSUE 1 - JANUARY 2006 2

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Datasheet ID: ZXM66P03N8TA 510261