ZTX1056ASTZ
ZTX1056ASTZ Datasheet
OBSOLETE - PLEASE USE ZTX855
| Part | Datasheet |
|---|---|
ZTX1056ASTZ |
ZTX1056ASTZ (pdf) |
| Related Parts | Information |
|---|---|
|
ZTX1056ASTOB |
ZTX1056ASTOB |
|
ZTX1056A |
ZTX1056A |
| PDF Datasheet Preview |
|---|
| OBSOLETE - PLEASE USE ZTX855 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A ISSUE 3 JANUARY 1995 FEATURES * VCEO=160V * 3 Amp Continuous Current * 6 Amp Pulse Current * Low Saturation Voltage E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 200 160 5 6 3 500 1 -55 to +200 UNIT V A mA W °C OBSOLETE - PLEASE USE ZTX855 ZTX1056A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V BR CBO IC=100µA Collector-Emitter Breakdown Voltage VCES IC=100µA Collector-Emitter Breakdown Voltage VCEO IC=10mA Collector-Emitter Breakdown Voltage VCEV IC=100µA, VEB=1V Emitter-Base Breakdown V BR EBO Voltage IE=100µA Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO Collector Emitter Cut-Off ICES Current VCB=150V VEB=4V VCES=150V Collector-Emitter Saturation Voltage VCE sat Base-Emitter Saturation Voltage VBE sat IC=0.1A, IB=5mA* |
| More datasheets: 1421700000 | 1421500000 | 74ABT125CSC | 74ABT125CSJ | 74ABT125CSJX | 74ABT125CSCX | 74ABT125CMTC | 74ABT125CMTCX | CYG2911 | FQAF6N80 |
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