DSR8F600
DSR8F600 Datasheet
DSR8F600
| Part | Datasheet |
|---|---|
DSR8F600 |
DSR8F600 (pdf) |
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| A D VNAEN ECWEWPDRPIORNDOFUDOCURTCMTA T I O N DSR8F600 Green 600V 8A HYPERFAST RECTIFIER Product Summary VRRM VF_TYP V +25°C tRR_max ns +25°C IRM_TYP A +25°C • Low VF Minimizes Boost Diode Conduction Losses • Very Fast tRR Reduces MOSFET PFC Switching Losses • Soft Switching Ensures Ringing and EMI are Reduced • Low QRR and IRM Minimize Boost Diode Recovery Losses • Lead-Free Finish RoHS Compliant Notes 1 & 2 • Halogen and Antimony Free. “Green” Device Note 3 Description and Application The DSR8F600 Hyperfast Rectifier has been designed specifically for use as a boost diode in Power Factor Correction PFC applications. Its soft very fast switching characteristics make it ideal for use in hard switching and Continuous Conduction Mode CCM PFC circuits. It can be used in • High Output SMPS • Servers and Telecom Equipment • Flat-panel TVs Mechanical Data • Case TO220AC • Case Material Molded Plastic, UL Flammability Classification Rating 94V-0 • Terminals Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 • Moisture Sensitivity Level 1 per J-STD-020 • Terminal Connections See Diagram Below • Weight grams Approximate Base Cathode 1 Cathode 3 Anode Package Pin Out Configuration Ordering Information Note 4 Part Number DSR8F600 Case TO220AC Packaging 50 pieces/tube EU Directive 2002/95/EC RoHS & 2011/65/EU RoHS 2 compliant. All applicable RoHS exemptions applied. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine <1500ppm total Br + Cl and <1000ppm antimony compounds. For packaging details, go to our website at Marking Information DSR8F600 = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code Marking YY = Last Two Digits of Year ex 15 = 2015 WW = Week 01 to 53 DSR8F600 1 of 6 June 2015 Diodes Incorporated A D VNAEN ECWEWPDRPIORNDOFUDOCURTCMTA T I O N Maximum Ratings = +25°C, unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. Characteristic Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load VRRM VRWM VRM IFSM Value 600 DSR8F600 Unit V A Thermal Characteristics Characteristic Typical Thermal Resistance, Junction to Case Note 5 Typical Thermal Resistance, Junction to Ambient Note 5 Typical Thermal Resistance, Junction to Case Note 6 Typical Thermal Resistance, Junction to Ambient Note 6 Storage Temperature Range Maximum Operating Junction Temperature Symbol TSTG TJ Value 46 7 -55 to +150 +150 Unit °C/W °C/W °C/W °C/W °C °C Electrical Characteristics = +25°C, unless otherwise specified. Characteristic Forward Voltage Drop Symbol Min Typ 9 500 35 85 Junction Capacitance Device free standing no heat sink. Device with 50mm*50mm*23mm Al heat sink. Short duration pulse test used to minimize self-heating effect. Max 80 1500 20 45 Unit µA ns nC A pF Test Condition IF = 5A, TJ = +25°C IF = 8A, TJ = +25°C IF = 8A, TJ = +125°C VR = 600V, TJ = +25°C VR = 500V, TJ = +100°C IF = 0.5A, IR = 1.0A, IRR = 0.25A IF = 8A, dl/dt = 300A/µs, VR = 400V, TJ = +25°C IF = 8A, dl/dt = 300A/µs, VR = 400V, TJ = +125°C 40.0V, 1MHz |
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