DNLS412E-13

DNLS412E-13 Datasheet

DNLS412E

Part	Datasheet
DNLS412E-13	DNLS412E-13 (pdf)

PDF Datasheet Preview
NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Resistance RCE SAT = at 4A • High DC Current Gain hFE > 400 at IC = 3A • Complementary PNP Type Available DPLS315E • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant Note 1 • "Green" Device Note 2 Mechanical Data • Case SOT-223 • Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity Level 1 per J-STD-020D • Terminals Finish Matte Tin annealed over Copper Leadframe Lead Free Plating . Solderable per MIL-STD-202, Method 208 • Marking Information See Page 3 • Ordering Information See Page 3 • Weight grams approximate 4 SOT-223 COLLECTOR 2,4 BASE 1 1B TOP VIEW 3 EMITTER Schematic and Pin Configuration Maximum Ratings = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value 12 5 4 10 Unit V A Thermal Characteristics Characteristic Power Dissipation = 25°C Note 3 Thermal Resistance, Junction to Ambient Air Note 3 = 25°C Operating and Storage Temperature Range Symbol PD TJ, TSTG Value 1 125 -55 to +150 Unit W °C/W °C No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at 1 of 4 DNLS412E Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E Electrical Characteristics = 25°C unless otherwise specified Characteristic Off Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current On Characteristics Note 4 V BR CBO V BR CEO V BR EBO ICBO IEBO Collector-Emitter Saturation Voltage VCE SAT Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE SAT VBE ON DC Current Gain AC Characteristics Transition Frequency Input Capacitance Output Capacitance Switching Times Notes Pulse Test Pulse width Duty cycle fT Cibo Cobo ton toff 500 400 100 150 Ordering Information Note 5 Device DNLS412E-13 Packaging SOT-223 For packaging details, go to our website at Shipping 2500/Tape & Reel Marking Information Top View YWW N412 N412 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year ex 7 = 2007 WW = Week code 01 - 52 3 of 4 DNLS412E Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E Package Outline Dimensions Suggested Pad Layout: SOT-223 Dim Min Max Typ A A1 b1 b2 C D E E1 e e1 L Q All Dimensions in mm IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 4 of 4 DNLS412E Diodes Incorporated

PDF Datasheet Preview

NOT RECOMMENDED FOR NEW DESIGN USE FZT688B

DNLS412E

LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Resistance RCE SAT = at 4A
• High DC Current Gain hFE > 400 at IC = 3A
• Complementary PNP Type Available DPLS315E
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant Note 1
• "Green" Device Note 2

Mechanical Data
• Case SOT-223
• Case Material Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0
• Moisture Sensitivity Level 1 per J-STD-020D
• Terminals Finish Matte Tin annealed over Copper Leadframe
Lead Free Plating . Solderable per MIL-STD-202, Method 208
• Marking Information See Page 3
• Ordering Information See Page 3
• Weight grams approximate
4 SOT-223

COLLECTOR 2,4

BASE 1
1B TOP VIEW
3 EMITTER

Schematic and Pin Configuration

Maximum Ratings = 25°C unless otherwise specified

Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current

Symbol VCBO VCEO VEBO IC ICM

Value 12 5 4 10

Unit V A

Thermal Characteristics

Characteristic Power Dissipation = 25°C Note 3 Thermal Resistance, Junction to Ambient Air Note 3 = 25°C Operating and Storage Temperature Range

Symbol PD

TJ, TSTG

Value 1
125 -55 to +150

Unit W °C/W °C

No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at
1 of 4

DNLS412E

Diodes Incorporated

NOT RECOMMENDED FOR NEW DESIGN USE FZT688B

DNLS412E

Electrical Characteristics = 25°C unless otherwise specified

Characteristic Off Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current On Characteristics Note 4

V BR CBO V BR CEO V BR EBO

ICBO IEBO

Collector-Emitter Saturation Voltage

VCE SAT

Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage

VBE SAT VBE ON

DC Current Gain

AC Characteristics Transition Frequency Input Capacitance Output Capacitance

Switching Times

Notes Pulse Test Pulse width Duty cycle
fT Cibo Cobo ton toff
500 400 100
150
Ordering Information Note 5

Device DNLS412E-13

Packaging SOT-223

For packaging details, go to our website at

Shipping 2500/Tape & Reel

Marking Information

Top View

YWW N412

N412 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year ex 7 = 2007 WW = Week code 01 - 52
3 of 4

DNLS412E

Diodes Incorporated

NOT RECOMMENDED FOR NEW DESIGN USE FZT688B

DNLS412E

Package Outline Dimensions Suggested Pad Layout:

SOT-223 Dim Min Max Typ

A A1 b1 b2 C D E E1 e e1 L Q All Dimensions in mm

IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.

LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
4 of 4

DNLS412E

Diodes Incorporated

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived DNLS412E-13 Datasheet file may be downloaded here without warranties.

Datasheet ID: DNLS412E-13 509944