DMMT5551-7

DMMT5551-7 Datasheet


DMMT5551/DMMT5551S

Part Datasheet
DMMT5551-7 DMMT5551-7 DMMT5551-7 (pdf)
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DMMT5551/DMMT5551S

MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

SPICE MODEL DMMT5551
• Epitaxial Planar Die Construction
• Complementary PNP Type Available

DMMT5401
• Ideal for Medium Power Amplification and

Switching
• Intrinsically Matched NPN Pair Note 1
• 2% Matched Tolerance, hFE, VCE SAT , VBE SAT
• 1% Matched Tolerance, Available Note 2
• Also Available in Lead Free Version

Mechanical Data
• Case SOT-26, Molded Plastic
• Case Material - UL Flammability Rating 94V-0
• Moisture sensitivity Level 1 per J-STD-020A
• Terminals Solderable per MIL-STD-202, Method 208
• Also Available in Lead Free Plating Matte Tin Finish . Please see Ordering Information,

Note 8, on Page 2
• Terminal Connections See Diagram
• Marking See Page 2 K4R & K4T
• Ordering & Date Code Information See Page 2

DMMT5551

DMMT5551S

K4R Marking Code K4T Marking Code
• Weight grams approx.

SOT-26 Dim Min Max Typ

A B C D F H J K L M a 0° 8° All Dimensions in mm

Maximum Ratings TA = 25°C unless otherwise specified

Characteristic

Value

Unit

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current - Continuous Note 3

Power Dissipation Note 3, 4

Thermal Resistance, Junction to Ambient Note 3

RqJA

Operating and Storage and Temperature Range

Tj, TSTG
-55 to +150

Built with adjacent die from a single wafer. Contact the Diodes, Inc. Sales department. Device mounted on FR-4 PCB, 1 inch x inch x inch pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at Maximum combined dissipation.
1 of 3

DMMT5551/DMMT5551S Diodes Incorporated

Electrical Characteristics TA = 25°C unless otherwise specified

Characteristic OFF CHARACTERISTICS Note 5 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS Note 5

DC Current Gain Note 6

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain

Current Gain-Bandwidth Product

Noise Figure

Symbol Min

V BR CBO V BR CEO V BR EBO

ICBO

IEBO
180 160

VCE SAT
Ordering Information Note 7

Device DMMT5551-7 DMMT5551S-7

Packaging SOT-26 SOT-26

Shipping 3000/Tape & Reel 3000/Tape & Reel

Short duration test pulse used to minimize self-heating effect. The DC Current Gain, hFE, matched at IC = 10mA and VCE = 5V Collector Emitter Saturation Voltage, VCE SAT , and Base

Emitter Saturation Voltage, VBE SAT are matched with typical matched tolerances of 1% and maximum of For Packaging Details, go to our website at For Lead Free version with Lead Free terminal finish part number, please add "-F" suffix to part number above.

Example DMMT5551-7-F.

Marking Information

K4R = DMMT5551 Product Type Marking Code YM = Date Code Marking Y = Year ex P = 2003 M = Month ex 9 = September

K4T = DMMT5551S Product Type Marking Code YM = Date Code Marking Y = Year ex P = 2003 M = Month ex 9 = September

Date Code Key

Month Code

Year Code

Feb March Apr
2003 P
2004 R
2005 S
2006 T
2007 U

May Jun Jul Aug Sep
2008 V

Nov N
2009 W

Dec D
2 of 3

DMMT5551/DMMT5551S

PD, POWER DISSIPATION mW
350 300 250
0 25 50 75 100 125 150 175 200

TA, AMBIENT TEMPERATURE °C Fig. 1, Max Power Dissipation vs Ambient Temperature
1000

VCE = 5V

TA = 150°C
100 TA = 25°C

TA = -50°C
1000

IC, COLLECTOR CURRENT mA Fig. 3, DC Current Gain vs Collector Current

VCE = 5V

VBE ON , BASE EMITTER VOLTAGE V

VCE SAT , COLLECTOR TO EMITTER SATURATION VOLTAGE V

IC IB
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Datasheet ID: DMMT5551-7 509929