SD385-24-21-041

SD385-24-21-041 Datasheet

Part	Datasheet
SD385-24-21-041	SD385-24-21-041 (pdf)

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Red Enhanced Bi-Cell Silicon Photodiode SD 385-24-21-041 PACKAGE DIMENSIONS INCH [mm] 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 CHIP DIMENSIONS INCH [mm] TO-46 PACKAGE • Low noise • Red enhanced • High shunt resistance • High response The SD 385-24-21-041 is a red enhanced Bi-Cell silicon photodiode used for nulling, centering, or measuring small positional changes packaged in a hermetic TO-8 metal package. ABSOLUTE MAXIMUM RATING TA = 23°C UNLESS OTHERWISE NOTED SYMBOL VBR MIN MAX UNITS Responsivity A/W TSTG Storage Temperature -55 +150 °C Operating Temperature -40 +125 °C Soldering Temperature* +240 °C * 1/16 inch from case for 3 seconds max. • Emitter Alignment • Position sensing • Medical and Industrial SPECTRAL RESPONSE Wavelength nm ELECTRO-OPTICAL CHARACTERISTICS RATING TA = 23°C UNLESS OTHERWISE NOTED SYMBOL ID RSH CJ lrange VBR NEP CHARACTERISTIC Dark Current Shunt Resistance Junction Capacitance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time TEST CONDITIONS VR = 5V VR = 10 mV VR = 0 V, f = 1 MHz VR = 10V, f = 1 MHz Spot Scan l= 633nm, VR = 0 V l= 900nm, VR = 0 V I = 10 uA VR = 0V l=950nm RL = 50 = 0 V RL = 50 = 10 V TYP MAX 390 85 50 2.9x10-14 190 13 1100 UNITS nA MW V W/ Hz Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone 805 987-0146 • Fax 805 484-9935 •

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Red Enhanced Bi-Cell Silicon Photodiode SD 385-24-21-041

PACKAGE DIMENSIONS INCH [mm]
250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150

CHIP DIMENSIONS INCH [mm]

TO-46 PACKAGE
• Low noise
• Red enhanced
• High shunt resistance
• High response

The SD 385-24-21-041 is a red enhanced Bi-Cell silicon photodiode used for nulling, centering, or measuring small positional changes packaged in a hermetic TO-8 metal package.

ABSOLUTE MAXIMUM RATING TA = 23°C UNLESS OTHERWISE NOTED

SYMBOL VBR

MIN MAX UNITS

Responsivity A/W

TSTG

Storage Temperature
-55 +150 °C

Operating Temperature -40 +125 °C

Soldering Temperature*
+240 °C
* 1/16 inch from case for 3 seconds max.
• Emitter Alignment
• Position sensing
• Medical and Industrial

SPECTRAL RESPONSE

Wavelength nm

ELECTRO-OPTICAL CHARACTERISTICS RATING TA = 23°C UNLESS OTHERWISE NOTED

SYMBOL ID RSH CJ lrange

VBR NEP

CHARACTERISTIC Dark Current Shunt Resistance Junction Capacitance Junction Capacitance Spectral Application Range

Responsivity

Breakdown Voltage Noise Equivalent Power

Response Time**

TEST CONDITIONS

VR = 5V VR = 10 mV VR = 0 V, f = 1 MHz VR = 10V, f = 1 MHz Spot Scan l= 633nm, VR = 0 V l= 900nm, VR = 0 V I = 10 uA VR = 0V l=950nm RL = 50 = 0 V RL = 50 = 10 V

TYP MAX
390 85
50 2.9x10-14 190 13
1100

UNITS nA MW

V W/ Hz
**Response time of 10% to 90% is specified at 660nm wavelength light.

Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.

Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012
• Phone 805 987-0146
• Fax 805 484-9935
•

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Datasheet ID: SD385-24-21-041 515691