DMJ70H1D3SH3

DMJ70H1D3SH3 Datasheet


DMJ70H1D3SH3

Part Datasheet
DMJ70H1D3SH3 DMJ70H1D3SH3 DMJ70H1D3SH3 (pdf)
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Product Summary

BVDSS 700V

RDS on max VGS = 10V

ID TC = +25°C
4.6A

Description and Applications

This MOSFET is designed to minimize the on-state resistance RDS on and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
• Motor Control
• Backlighting
• AC-DC Converters

DMJ70H1D3SH3

N-CHANNEL ENHANCEMENT MODE MOSFET
• Low On-Resistance
• High BVDss rating for power application
• Low Input Capacitance
• Lead-Free Finish RoHS Compliant Notes 1 & 2
• Halogen and Antimony Free. “Green” Device Note 3

Mechanical Data
• Case TO251
• Case Material Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0
• Moisture Sensitivity Level 1 per J-STD-020
• Terminal Connections See Diagram
• Terminals Finish Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208 e3
• Weight grams Approximate

TO251
uIPAK

TO251 Top View

TO251 Bottom View

Top View Pin Configuration

Internal Schematic
Ordering Information Note 4

Part Number DMJ70H1D3SH3

Case TO251

Packaging 75pieces / tube

EU Directive 2002/95/EC RoHS & 2011/65/EU RoHS 2 compliant. All applicable RoHS exemptions applied. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine <1500ppm total Br + Cl and
<1000ppm antimony compounds. For packaging details, go to our website at

Marking Information

TO251
7N70SH YYWW
=Manufacturer’s Marking 7N70SH = Product Type Marking Code YYWW = Date Code Marking YY or YY= Last Digit of Year ex 15 = 2015 WW or WW = Week Code 01 to 53

DMJ70H1D3SH3
1 of 6

November 2015

Diodes Incorporated

DMJ70H1D3SH3

Maximum Ratings = +25°C, unless otherwise specified.

Drain-Source Voltage Gate-Source Voltage

Characteristic

Continuous Drain Current Note 5 VGS = 10V

Maximum Body Diode Forward Current Note 6 Pulsed Drain Current 10µs pulse, duty cycle = 1% Avalanche Current Note 7 Avalanche Energy Note 7 Peak Diode Recovery dv/dt Note 7

TC = +25°C TC = +100°C

L = 60mH L = 60mH

Symbol VDSS VGSS

IS IDM IAS EAS dv/dt

Value 700 ±30 40

Thermal Characteristics = +25°C, unless otherwise specified.

Characteristic

Total Power Dissipation Note 5

Thermal Resistance, Junction to Ambient Note 6 Thermal Resistance, Junction to Case Note 5 Operating and Storage Temperature Range

TC = +25°C TC = +100°C

TJ, TSTG

Value 41 16 79
-55 to +150

Units V A mJ

V/ns

Units W
°C/W °C

Electrical Characteristics = +25°C, unless otherwise specified.

Characteristic

Symbol Min
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Datasheet ID: DMJ70H1D3SH3 509927