DMJ70H1D3SH3
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Product Summary BVDSS 700V RDS on max VGS = 10V ID TC = +25°C 4.6A Description and Applications This MOSFET is designed to minimize the on-state resistance RDS on and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Backlighting • AC-DC Converters DMJ70H1D3SH3 N-CHANNEL ENHANCEMENT MODE MOSFET • Low On-Resistance • High BVDss rating for power application • Low Input Capacitance • Lead-Free Finish RoHS Compliant Notes 1 & 2 • Halogen and Antimony Free. “Green” Device Note 3 Mechanical Data • Case TO251 • Case Material Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity Level 1 per J-STD-020 • Terminal Connections See Diagram • Terminals Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 • Weight grams Approximate TO251 uIPAK TO251 Top View TO251 Bottom View Top View Pin Configuration Internal Schematic Ordering Information Note 4 Part Number DMJ70H1D3SH3 Case TO251 Packaging 75pieces / tube EU Directive 2002/95/EC RoHS & 2011/65/EU RoHS 2 compliant. All applicable RoHS exemptions applied. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine <1500ppm total Br + Cl and <1000ppm antimony compounds. For packaging details, go to our website at Marking Information TO251 7N70SH YYWW =Manufacturer’s Marking 7N70SH = Product Type Marking Code YYWW = Date Code Marking YY or YY= Last Digit of Year ex 15 = 2015 WW or WW = Week Code 01 to 53 DMJ70H1D3SH3 1 of 6 November 2015 Diodes Incorporated DMJ70H1D3SH3 Maximum Ratings = +25°C, unless otherwise specified. Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current Note 5 VGS = 10V Maximum Body Diode Forward Current Note 6 Pulsed Drain Current 10µs pulse, duty cycle = 1% Avalanche Current Note 7 Avalanche Energy Note 7 Peak Diode Recovery dv/dt Note 7 TC = +25°C TC = +100°C L = 60mH L = 60mH Symbol VDSS VGSS IS IDM IAS EAS dv/dt Value 700 ±30 40 Thermal Characteristics = +25°C, unless otherwise specified. Characteristic Total Power Dissipation Note 5 Thermal Resistance, Junction to Ambient Note 6 Thermal Resistance, Junction to Case Note 5 Operating and Storage Temperature Range TC = +25°C TC = +100°C TJ, TSTG Value 41 16 79 -55 to +150 Units V A mJ V/ns Units W °C/W °C Electrical Characteristics = +25°C, unless otherwise specified. Characteristic Symbol Min |
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