Not Recommended for New Design Use DMG4406LSS
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DMG8880LSS-13 (pdf) |
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Not Recommended for New Design Use DMG4406LSS DMG8880LSS N-CHANNEL ENHANCEMENT MODE MOSFET • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2 • Halogen and Antimony Free. “Green” Device Note 3 • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case SO-8 • Case Material Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity Level 1 per J-STD-020 • Terminal Connections See Diagram Below • Weight grams approximate Top View Top View Internal Schematic Ordering Information Note 4 Part Number DMG8880LSS-13 Case SO-8 Packaging 2500 / Tape & Reel No purposely added lead. Fully EU Directive 2002/95/EC RoHS & 2011/65/EU RoHS 2 compliant. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine <1500ppm total Br + Cl and <1000ppm antimony compounds. For packaging details, go to our website at Marking Information G8880LS YY WW Logo Part no. Xth week 01 ~ 53 Year “08” = 2008 “09” = 2009 DMG8880LSS 1 of 6 May 2013 Diodes Incorporated Not Recommended for New Design Use DMG4406LSS DMG8880LSS Maximum Ratings = 25°C unless otherwise specified Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Note 5 Pulsed Drain Current Note 6 Characteristic Steady State TA = 25°C TA = 70°C Symbol VDSS VGSS Value 30 ±20 80 Unit V Thermal Characteristics Characteristic Power Dissipation Note 5 Thermal Resistance, Junction to Ambient = 25°C Note 5 Operating and Storage Temperature Range Symbol PD R• JA TJ, TSTG Value 87 -55 to +150 Unit W °C/W °C Electrical Characteristics = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Note 7 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS Note 7 Gate Threshold Voltage Symbol Min BVDSS IDSS IGSS VGS th Static Drain-Source On-Resistance |
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