FDW262P
FDW262P Datasheet
FDW262P
| Part | Datasheet |
|---|---|
FDW262P |
FDW262P (pdf) |
| PDF Datasheet Preview |
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| FDW262P July 2008 FDW262P 20V P-Channel MOSFET This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Power management • Load switch • A, V. RDS ON = 47 VGS = V RDS ON = 65 VGS = V RDS ON = 100 VGS = V • RDS ON rated for use with V logic • Low gate charge 13nC typical • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package TSSOP-8 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 262P FDW262P 13’’ 5 6 7 8 Ratings ±8 to +150 87 133 Tape width 16mm 4 3 2 1 Units W °C °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDW262P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C mV/°C VDS = V, VGS = 8 V, VGS = V VGS = 0 V VDS = 0 V VDS = 0 V 100 nA On Characteristics Note 2 VGS th |
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