BSS138
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BSS138TC (pdf) |
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BSS138-7 |
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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 MARCH 1996 PARTMARKING DETAIL BSS138 ABSOLUTE MAXIMUM RATINGS. SOT23 PARAMETER VALUE UNIT Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage ± 20 Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg -55 to +150 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS ID=0.25mA, VGS=0V Gate-Source Threshold Voltage VGS th ID=1mA, VDS= VGS Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-State Resistance 1 IGSS IDSS RDS on 100 nA 100 nA VGS=± 20V, VDS=0V VDS=50V, VGS=0 VDS=50V, VGS=0V, T=125°C 2 VDS=20V, VGS=0 VGS=5V,ID=200mA Forward Transconductance 1 2 mS VDS=25V,ID=200mA Input Capacitance 2 Ciss |
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