FJN3303BU

FJN3303BU Datasheet

FJN3303 High Voltage Fast-Switching NPN Power Transistor

Part	Datasheet
FJN3303BU	FJN3303BU (pdf)

Related Parts	Information
FJN3303TA	FJN3303TA

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FJN3303 High Voltage Fast-Switching NPN Power Transistor May 2005 FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Charger TO-92 Emitter Collector 3.Base Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse * Base Current DC Base Current Pulse * Collector Power Dissipation TC = 25°C Junction Temperature Storage Temperature * Pulse Test Pulse Width = 5ms, Duty Cycle 10% Value 700 400 9 3 150 -65 ~ 150 Units V A W °C °C 2005 Fairchild Semiconductor Corporation FJN3303 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT tON tSTG tF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn On Time Storage Time Fall Time IC = 500µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1.0A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A VCE = 10V, IC = 0.1A VCC = 125V, IC = 1A IB1 = - IB2 = -0.2A RL = Thermal Characteristics TC = 25°C unless otherwise noted Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Rating 48 125 Min. 700 400 Typ. 10 23 Units V µA µA

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FJN3303 High Voltage Fast-Switching NPN Power Transistor

May 2005

FJN3303

High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Charger

TO-92

Emitter Collector 3.Base

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse * Base Current DC Base Current Pulse * Collector Power Dissipation TC = 25°C Junction Temperature Storage Temperature
* Pulse Test Pulse Width = 5ms, Duty Cycle 10%

Value
700 400
9 3 150 -65 ~ 150

Units

V A W °C °C
2005 Fairchild Semiconductor Corporation

FJN3303 High Voltage Fast-Switching NPN Power Transistor

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Conditions

BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat

VBE sat
fT tON tSTG tF

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product Turn On Time Storage Time Fall Time

IC = 500µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1.0A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A VCE = 10V, IC = 0.1A VCC = 125V, IC = 1A IB1 = - IB2 = -0.2A RL =

Thermal Characteristics TC = 25°C unless otherwise noted

Parameter

Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient

Rating
48 125

Min.
700 400

Typ.
10 23

Units

V µA µA

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Datasheet ID: FJN3303BU 514723