BSS123ATA
BSS123ATA Datasheet
BSS123A
| Part | Datasheet |
|---|---|
BSS123ATA |
BSS123ATA (pdf) |
| Related Parts | Information |
|---|---|
|
BSS123ATC |
BSS123ATC |
| PDF Datasheet Preview |
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| SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold PARTMARKING DETAIL BSS123A ABSOLUTE MAXIMUM RATINGS. PARAMETER VALUE UNIT Drain-Source Voltage Drain-Gate Voltage VDGR Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage ± 20 Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg -55 to +150 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 ID=0.25mA, VGS=0V Gate-Source Threshold VGS th Voltage ID=1mA, VDS= VGS Gate-Body Leakage Zero Gate Voltage Drain Current IGSS IDSS 50 nA 500 nA VGS=± 20V, VDS=0V VDS=100V, VGS=0V Static Drain-Source RDS on On-State Resistance 1 Forward Transconductance 1 2 VGS=10V, ID=170mA VGS=4.5V, ID=170mA mS VDS=25V, ID=100mA Input Capacitance 2 |
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