CY62157CV33LL-70BAXAT

CY62157CV33LL-70BAXAT Datasheet

CY62157CV30/33

Part	Datasheet
CY62157CV33LL-70BAXAT	CY62157CV33LL-70BAXAT (pdf)

Related Parts	Information
CY62157CV33LL-70BAXA	CY62157CV33LL-70BAXA

PDF Datasheet Preview
CY62157CV30/33 512K x 16 Static RAM • Temperature Ranges Automotive-A to 85°C Automotive-E to 125°C • Voltage range CY62157CV30 CY62157CV33: • Ultra-low active power Typical active current mA f = 1 MHz Typical active current mA f = fmax • Low standby power • Easy memory expansion with CE1, CE2 and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Available in Pb-free and non Pb-free 48-ball FBGA package Functional Description[1] The CY62157CV30/33 are high-performance CMOS static RAMs organized as 512K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life MoBL in portable applications such as cellular telephones. The devices also have an automatic power-down feature that Logic Block Diagram A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 DATA IN DRIVERS 512K x 16 RAM Array significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE1 HIGH or CE2 LOW or both BLE and BHE are HIGH . The input/output pins I/O0 through I/O15 are placed in a high-impedance state when deselected CE1 HIGH or CE2 LOW , outputs are disabled OE HIGH , both Byte High Enable and Byte Low Enable are disabled BHE, BLE HIGH , or during a write operation CE1 LOW and CE2 HIGH and WE LOW . Writing to the device is accomplished by taking Chip Enable 1 CE1 and Write Enable WE inputs LOW and Chip Enable 2 CE2 HIGH. If Byte Low Enable BLE is LOW, then data from I/O pins I/O0 through I/O7 , is written into the location specified on the address pins A0 through A18 . If Byte High Enable BHE is LOW, then data from I/O pins I/O8 through I/O15 is written into the location specified on the address pins A0 through A18 . Reading from the device is accomplished by taking Chip Enable 1 CE1 and Output Enable OE LOW and Chip Enable 2 CE2 HIGH while forcing the Write Enable WE HIGH. If Byte Low Enable BLE is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable BHE is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. The CY62157CV30/33 are available in a 48-ball FBGA package. ROW DECODER A11 A12 A13 A14 A15 A16 A17 A18 SENSE AMPS COLUMN DECODER BHE WE CE2 CE1 Power -down Circuit BHE BLE CE2 CE1 Note For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 [+] Feedback CY62157CV30/33 Product Portfolio Product CY62157CV30 CY62157CV33 Range Automotive-E Automotive-A Automotive-E Pin Configurations[2, 3, 4] VCC Range Min. Typ.[2] Max. 2.7V 3.0V 3.3V 3.0V 3.3V 3.6V Power Dissipation Operating ICC mA f = 1 MHz Typ.[2] Max. f = fmax Typ.[2] Max. Standby ISB2 µA Typ.[2] Max. FBGA Top View BLE OE A0 A1 A2 CE2 Ordering Information Speed ns Ordering Code CY62157CV30LL-70BAE CY62157CV33LL-70BAXA CY62157CV33LL-70BAE Package Diagram 51-85128 Package Type 48-Ball 6 mm x 10 mm x mm FBGA Package Diagram 48-Ball 6 mm x 10 mm x mm FBGA 51-85128 Operating Range Automotive-E Automotive-A Automotive-E TOP VIEW A1 CORNER 12 3 4 5 6 BOTTOM VIEW A1 CORNER M C M C A B Ø0.30±0.05 48X 6 54 3 2 1 B 0.15 4X SEATING PLANE C 51-85128-*D MoBL, MoBL2, and More Battery Life are trademarks of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. Page 12 of 13 Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] Feedback CY62157CV30/33 Document History Page Document Title CY62157CV30/33 512K x 16 Static RAM Document Number 38-05014 Orig. of ECN NO. Issue Date Change Description of Change 106184 05/10/01 HRT/MGN New data sheet Advance Information 107241 07/24/01 MGN Made corrections to Advance Information Added 55 ns bin 109621 03/11/02 MGN Changed from Advance Information to Final 114218 05/01/02 GUG/MGN Improved Typical and Max ICC values 238448 See ECN AJU Added Automotive Product Information 269729 See ECN SYT Added Automotive Product information for CY62157CV30 70 ns Added IIX and IOZ values for Automotive range of CY62157CV33 70 ns 498575 See ECN NXR Removed Industrial Operating Range Added Automotive-A operating range Updated the Ordering Information Table Page 13 of 13 [+] Feedback

PDF Datasheet Preview

CY62157CV30/33
512K x 16 Static RAM
• Temperature Ranges Automotive-A to 85°C Automotive-E to 125°C
• Voltage range CY62157CV30 CY62157CV33:
• Ultra-low active power Typical active current mA f = 1 MHz Typical active current mA f = fmax
• Low standby power
• Easy memory expansion with CE1, CE2 and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in Pb-free and non Pb-free 48-ball FBGA
package

Functional Description[1]

The CY62157CV30/33 are high-performance CMOS static RAMs organized as 512K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life MoBL in portable applications such as cellular telephones. The devices also have an automatic power-down feature that

Logic Block Diagram

A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

DATA IN DRIVERS
512K x 16 RAM Array
significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE1 HIGH or CE2 LOW or both BLE and BHE are HIGH . The input/output pins I/O0 through I/O15 are placed in a high-impedance state when deselected CE1 HIGH or CE2 LOW , outputs are disabled OE HIGH , both Byte High Enable and Byte Low Enable are disabled BHE, BLE HIGH , or during a write operation CE1 LOW and CE2 HIGH and WE LOW . Writing to the device is accomplished by taking Chip Enable 1 CE1 and Write Enable WE inputs LOW and Chip Enable 2 CE2 HIGH. If Byte Low Enable BLE is LOW, then data from I/O pins I/O0 through I/O7 , is written into the location specified on the address pins A0 through A18 . If Byte High Enable BHE is LOW, then data from I/O pins I/O8 through I/O15 is written into the location specified on the address pins A0 through A18 . Reading from the device is accomplished by taking Chip Enable 1 CE1 and Output Enable OE LOW and Chip Enable 2 CE2 HIGH while forcing the Write Enable WE HIGH. If Byte Low Enable BLE is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable BHE is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. The CY62157CV30/33 are available in a 48-ball FBGA package.

ROW DECODER A11 A12 A13 A14 A15 A16 A17 A18

SENSE AMPS

COLUMN DECODER

BHE WE

CE2 CE1

Power -down Circuit

BHE BLE

CE2 CE1

Note For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on

Cypress Semiconductor Corporation
• 198 Champion Court
• San Jose, CA 95134-1709
• 408-943-2600
[+] Feedback

CY62157CV30/33

Product Portfolio

Product CY62157CV30 CY62157CV33

Range Automotive-E Automotive-A Automotive-E

Pin Configurations[2, 3, 4]

VCC Range Min. Typ.[2] Max.
2.7V 3.0V 3.3V
3.0V 3.3V 3.6V

Power Dissipation

Operating ICC mA
f = 1 MHz Typ.[2] Max.
f = fmax Typ.[2] Max.

Standby ISB2 µA

Typ.[2] Max.

FBGA Top View

BLE OE A0 A1 A2 CE2
Ordering Information

Speed ns
Ordering Code CY62157CV30LL-70BAE CY62157CV33LL-70BAXA CY62157CV33LL-70BAE

Package Diagram
51-85128

Package Type 48-Ball 6 mm x 10 mm x mm FBGA

Package Diagram
48-Ball 6 mm x 10 mm x mm FBGA 51-85128

Operating Range

Automotive-E

Automotive-A

Automotive-E

TOP VIEW

A1 CORNER 12 3 4 5 6

BOTTOM VIEW A1 CORNER

M C M C A B Ø0.30±0.05 48X
6 54 3 2 1

B 0.15 4X

SEATING PLANE C
51-85128-*D

MoBL, MoBL2, and More Battery Life are trademarks of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders.

Page 12 of 13

Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
[+] Feedback

CY62157CV30/33

Document History Page

Document Title CY62157CV30/33 512K x 16 Static RAM Document Number 38-05014

Orig. of ECN NO. Issue Date Change

Description of Change
106184 05/10/01 HRT/MGN New data sheet Advance Information
107241 07/24/01 MGN Made corrections to Advance Information

Added 55 ns bin
109621 03/11/02 MGN Changed from Advance Information to Final
114218 05/01/02 GUG/MGN Improved Typical and Max ICC values
238448 See ECN

AJU Added Automotive Product Information
269729 See ECN SYT Added Automotive Product information for CY62157CV30 70 ns

Added IIX and IOZ values for Automotive range of CY62157CV33 70 ns
498575 See ECN NXR Removed Industrial Operating Range
Added Automotive-A operating range Updated the Ordering Information Table

Page 13 of 13 [+] Feedback

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived CY62157CV33LL-70BAXAT Datasheet file may be downloaded here without warranties.

Datasheet ID: CY62157CV33LL-70BAXAT 507821