C3M0120100K

C3M0120100K Datasheet


C3M0120100K

Part Datasheet
C3M0120100K C3M0120100K C3M0120100K (pdf)
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1000 V

C3M0120100K

Silicon Carbide Power MOSFET TM

C3M MOSFET Technology

RDS on

N-Channel Enhancement Mode

Package
• C3MTM SiC MOSFET technology
• Optimized package with separate driver source pin

TAB Drain
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances



Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
1 234 D SSG

Drain Pin 1, TAB

Gate Pin 4

Driver Source Pin 3

Power Source Pin 2

Part Number C3M0120100K

Package TO 247-4

Marking C3M0120100K

Maximum Ratings TC = 25 unless otherwise specified

Parameter

Value

VDSmax VGSmax VGSop

Drain - Source Voltage Gate - Source Voltage dynamic Gate - Source Voltage static

Continuous Drain Current
1000 -8/+19 -4/+15

ID pulse Pulsed Drain Current

Power Dissipation

TJ , Tstg Operating Junction and Storage Temperature

Solder Temperature

Note 1 When using MOSFET Body Diode VGSmax = -4V/+19V Note 2 MOSFET can also safely operate at 0/+15 V
-55 to +150

Unit

Test Conditions

V VGS = 0 V, ID = 100 uA V AC f >1 Hz V Static

VGS = 15 V, TC = A

VGS = 15 V, TC = A Pulse width tP limited by Tjmax

W TJ = 150
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Datasheet ID: C3M0120100K 506944