C3M0120100K

C3M0120100K Datasheet

C3M0120100K

Part	Datasheet
C3M0120100K	C3M0120100K (pdf)

PDF Datasheet Preview
1000 V C3M0120100K Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS on N-Channel Enhancement Mode Package • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin TAB Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies 1 234 D SSG Drain Pin 1, TAB Gate Pin 4 Driver Source Pin 3 Power Source Pin 2 Part Number C3M0120100K Package TO 247-4 Marking C3M0120100K Maximum Ratings TC = 25 unless otherwise specified Parameter Value VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage dynamic Gate - Source Voltage static Continuous Drain Current 1000 -8/+19 -4/+15 ID pulse Pulsed Drain Current Power Dissipation TJ , Tstg Operating Junction and Storage Temperature Solder Temperature Note 1 When using MOSFET Body Diode VGSmax = -4V/+19V Note 2 MOSFET can also safely operate at 0/+15 V -55 to +150 Unit Test Conditions V VGS = 0 V, ID = 100 uA V AC f >1 Hz V Static VGS = 15 V, TC = A VGS = 15 V, TC = A Pulse width tP limited by Tjmax W TJ = 150

PDF Datasheet Preview

1000 V

C3M0120100K

Silicon Carbide Power MOSFET TM

C3M MOSFET Technology

RDS on

N-Channel Enhancement Mode

Package
• C3MTM SiC MOSFET technology
• Optimized package with separate driver source pin

TAB Drain
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
•
•

Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
1 234 D SSG

Drain Pin 1, TAB

Gate Pin 4

Driver Source Pin 3

Power Source Pin 2

Part Number C3M0120100K

Package TO 247-4

Marking C3M0120100K

Maximum Ratings TC = 25 unless otherwise specified

Parameter

Value

VDSmax VGSmax VGSop

Drain - Source Voltage Gate - Source Voltage dynamic Gate - Source Voltage static

Continuous Drain Current
1000 -8/+19 -4/+15

ID pulse Pulsed Drain Current

Power Dissipation

TJ , Tstg Operating Junction and Storage Temperature

Solder Temperature

Note 1 When using MOSFET Body Diode VGSmax = -4V/+19V Note 2 MOSFET can also safely operate at 0/+15 V
-55 to +150

Unit

Test Conditions

V VGS = 0 V, ID = 100 uA V AC f >1 Hz V Static

VGS = 15 V, TC = A

VGS = 15 V, TC = A Pulse width tP limited by Tjmax

W TJ = 150

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived C3M0120100K Datasheet file may be downloaded here without warranties.

Datasheet ID: C3M0120100K 506944