CDBHD2100-G
CDBHD2100-G Datasheet
CDBHD280-G Thru 2100-G
| Part | Datasheet |
|---|---|
CDBHD2100-G |
CDBHD2100-G (pdf) |
| PDF Datasheet Preview |
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| Schottky Bridge Rectifiers COMCHIP SMD DIODE SPECIALIST CDBHD280-G Thru 2100-G Forward Current Amp • Schottky barrier chips in bridge • Metal-Semiconductor junction with guard ring • Highsurge current capability • Silicon epitaxial planar chips ~ • For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications • Lead-free part, meet RoHS requirements Mini-DIP Max. Mechanical Data • Case Mini-Dip bridge TO-269AA plastic molded case • Epoxy UL94-V0 rated flame retardant • Terminals Solderable per MIL-STD-750 Method 2026 • Polarity As marked on body • Mounting Position Any • Weight ounces, grams Max. MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified CDBHD - Symbols Unit :inch mm 2100 Units VRRM Volts Maximum RMS Voltage VRMS Volts Maximum DC Blocking Voltage Volts Maximum Average Forward Rectified Current 0.2x0.2” 5.0x5.0mm copper pad area, see Figure 1 Peak Forward Surge Current 8.3mS single half sine-wave superimp osed on rated load JEDEC Me thod Maximum Forward Voltage at 1.0A Note 1 IAV IFSM TA= 25°C TA= 100°C Typical Junction Capacitance Note 2 Amps Amps Volts mA pF |
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