CS202-4N
CS202-4N Datasheet
CS202-4B CS202-4D CS202-4M CS202-4N
| Part | Datasheet |
|---|---|
CS202-4N |
CS202-4N (pdf) |
| Related Parts | Information |
|---|---|
|
CS202-4D |
CS202-4D |
|
CS202-4M |
CS202-4M |
|
CS202-4B |
CS202-4B |
| PDF Datasheet Preview |
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| CS202-4B CS202-4D CS202-4M CS202-4N AMP SCR 200 THRU 800 VOLTS w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR CS202-4B series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. MARKING FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS TC=25°C unless otherwise noted CS202 SYMBOL -4B Peak Repetitive Off-State Voltage VDRM, VRRM 200 RMS On-State Current TC=85°C IT RMS Peak One Cycle Surge t=10ms ITSM I2t Value for Fusing t=10ms Peak Gate Power tp=20us Average Gate Power Dissipation Peak Gate Current tp=20us Critical Rate of Rise of On-State Current PGM PG AV IGM di/dt Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance Tstg TJ ΘJA ΘJC CS202 -4D 400 CS202 -4M 600 -40 to +150 -40 to +125 CS202 -4N 800 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted SYMBOL TEST CONDITIONS IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C VD=12V, RL=10Ω IT=50mA, RGK=1.0KΩ VD=12V, RL=10Ω ITM=8.0A, tp=380us dv/dt VDRM, RGK=1.0KΩ, TC=125°C MAX 10 200 UNITS V A A2s W A A/us °C °C °C/W °C/W UNITS uA mA V/us R4 23-January 2012 CS202-4B CS202-4D CS202-4M CS202-4N |
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