CQ220-12M3 SL

CQ220-12M3 SL Datasheet


CQ220-12M3

Part Datasheet
CQ220-12M3 SL CQ220-12M3 SL CQ220-12M3 SL (pdf)
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CQ220-12M3

SILICON THREE-QUADRANT TRIAC
12 AMP, 600 VOLT
w. c e n t r a l s e m i c o m

DESCRIPTION The CENTRAL SEMICONDUCTOR CQ220-12M3 is an epoxy molded silicon TRIAC designed for full wave AC control applications featuring gate triggering in three quadrants.

MARKING FULL PART NUMBER

TO-220 CASE

FEATURES
• 3Q technology for noise immunity
• High commutation capability
• Triggering in three quadrants only

APPLICATIONS
• Motor controls
• General purpose AC switching
• High power inductive load switching

MAXIMUM RATINGS TC=25°C unless otherwise noted SYMBOL

Peak Repetitive Off-State Voltage

VDRM, VRRM

Peak One Cycle Surge Voltage, t=10ms TJ=125°C

VDSM

RMS On-State Current TC=90°C

IT RMS

Peak One Cycle Surge Current, t=16.7ms

ITSM

I2t Value for Fusing, t=10ms

Average Gate Power Dissipation TJ=125°C Peak Gate Current, tp=20us TJ=125°C Critical Rate of Rise of On-State Current Repetitive, f=120Hz TJ=125°C Operating Junction Temperature

Storage Temperature

Thermal Resistance

Thermal Resistance

PG AV IGM
di/dt TJ Tstg ΘJA ΘJC

ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted

SYMBOL TEST CONDITIONS

IDRM, IRRM VDRM, VRRM=600V

VD=12V, RL=30Ω, QUAD I, II, III

IT=500mA

VD=12V, RL=30Ω, QUAD I, II, III

ITM=17A, tp=380us
dv/dt
∞ RGK= , TJ=125°C
600 700 12 100 78
50 -40 to +125 -40 to +150

MAX 50 500

UNITS V A A2s W A

A/us °C °C °C/W °C/W

UNITS uA mA V/us

R1 7-October 2015
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Datasheet ID: CQ220-12M3 SL 522784