CQ220-12M3 SL
CQ220-12M3 SL Datasheet
CQ220-12M3
| Part | Datasheet |
|---|---|
CQ220-12M3 SL |
CQ220-12M3 SL (pdf) |
| PDF Datasheet Preview |
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| CQ220-12M3 SILICON THREE-QUADRANT TRIAC 12 AMP, 600 VOLT w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR CQ220-12M3 is an epoxy molded silicon TRIAC designed for full wave AC control applications featuring gate triggering in three quadrants. MARKING FULL PART NUMBER TO-220 CASE FEATURES • 3Q technology for noise immunity • High commutation capability • Triggering in three quadrants only APPLICATIONS • Motor controls • General purpose AC switching • High power inductive load switching MAXIMUM RATINGS TC=25°C unless otherwise noted SYMBOL Peak Repetitive Off-State Voltage VDRM, VRRM Peak One Cycle Surge Voltage, t=10ms TJ=125°C VDSM RMS On-State Current TC=90°C IT RMS Peak One Cycle Surge Current, t=16.7ms ITSM I2t Value for Fusing, t=10ms Average Gate Power Dissipation TJ=125°C Peak Gate Current, tp=20us TJ=125°C Critical Rate of Rise of On-State Current Repetitive, f=120Hz TJ=125°C Operating Junction Temperature Storage Temperature Thermal Resistance Thermal Resistance PG AV IGM di/dt TJ Tstg ΘJA ΘJC ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted SYMBOL TEST CONDITIONS IDRM, IRRM VDRM, VRRM=600V VD=12V, RL=30Ω, QUAD I, II, III IT=500mA VD=12V, RL=30Ω, QUAD I, II, III ITM=17A, tp=380us dv/dt ∞ RGK= , TJ=125°C 600 700 12 100 78 50 -40 to +125 -40 to +150 MAX 50 500 UNITS V A A2s W A A/us °C °C °C/W °C/W UNITS uA mA V/us R1 7-October 2015 |
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