NE67739-A

NE67739-A Datasheet

NE67739

Part	Datasheet
NE67739-A	NE67739-A (pdf)

Related Parts	Information
2SC5454-A	2SC5454-A

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DISCONTIN DATA SHEET SILICON TRANSISTOR NE67739 2SC5454 JEITA Part No. NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD 2.9U ED PACKAGE DIMENSIONS in mm ABSOLUTE MAXIMUM RATINGS TA = 25 °C PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 50 200 150 to +150 ELECTRICAL CHARACTERISTICS TA = 25 °C UNIT V mA mW °C °C SYMBOL ICBO IEBO hFE fT Cre \|S21e\|2 NF TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 20 mANote 1 VCE = 3 V, IC = 20 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2 VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 3 V, IC = 5 mA, f = 2 GHz PIN CONNECTIONS 1 Collector 2 Emitter 3 Base 4 Emitter MIN. 75 10 TYP. MAX. 150 UNIT µA µA GHz pF dB Notes Pulse measurement PW 350 µs, duty cycle 2 % Collector to base capacitance measured by capacitance meter automatic balance bridge method when emitter pin is connected to the guard pin. Because this product uses high-frequency process, avoid excessive input of static electricity, etc. The information in this document is subject to change without notice. Document No. P13080EJ1V0DS00 1st edition Date Published February 1998 N CP K IC DISC -CollectorO CurrentN -mA TIN PT - Total PowerU Dissipation -E mW D TYPICAL CHARACTERISTICS TA = 25 °C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free Air 200 TA - Ambient Temperature - °C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 200 uA 180 uA 160 uA 140 uA 120 uA 100 uA 80 uA

PDF Datasheet Preview

DISCONTIN

DATA SHEET

SILICON TRANSISTOR

NE67739
2SC5454 JEITA Part No.

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2.9U ED

PACKAGE DIMENSIONS in mm

ABSOLUTE MAXIMUM RATINGS TA = 25 °C

PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature

SYMBOL VCBO VCEO VEBO IC PT Tj Tstg

RATING 9 6 2 50
200 150 to +150

ELECTRICAL CHARACTERISTICS TA = 25 °C

UNIT V mA
mW °C °C

SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF

TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 20 mANote 1 VCE = 3 V, IC = 20 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2 VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 3 V, IC = 5 mA, f = 2 GHz

PIN CONNECTIONS 1 Collector 2 Emitter 3 Base 4 Emitter

MIN. 75 10

TYP.

MAX. 150

UNIT µA µA

GHz pF dB

Notes Pulse measurement PW 350 µs, duty cycle 2 % Collector to base capacitance measured by capacitance meter automatic balance bridge method when emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice. Document No. P13080EJ1V0DS00 1st edition Date Published February 1998 N CP K

IC DISC -CollectorO CurrentN -mA TIN

PT - Total PowerU Dissipation -E mW D

TYPICAL CHARACTERISTICS TA = 25 °C

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

Free Air 200

TA - Ambient Temperature - °C

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30
200 uA
180 uA
160 uA
140 uA
120 uA
100 uA
80 uA

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Datasheet ID: NE67739-A 522747