MSA-1120

MSA-1120 Datasheet

MSA-1120 Cascadable Silicon Bipolar MMIC Amplifier

Part	Datasheet
MSA-1120	MSA-1120 (pdf)

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MSA-1120 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. • High Dynamic Range Cascadable 50Ω or 75Ω Gain Block • 3 dB Bandwidth 50 MHz to GHz • dBm Typical P1 dB at GHz • 12 dB Typical 50 Ω Gain at GHz • dB Typical Noise Figure at GHz • Hermetic Metal/Beryllia Microstrip Package The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, and reliability. The use of an external bias resistor for temperature and current stability also bias flexibility. 200 mil BeO Package Typical Biasing Configuration R bias VCC > 8 V C block IN 3 1 MSA RFC Optional C block Vd = V MSA-1120 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current Power Dissipation[2,3] 100 mA 650 mW RF Input Power +13 dBm Junction Temperature 200°C Storage Temperature to 200°C Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 161°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. Thermal Resistance[2,4] = 60°C/W Electrical Specifications[1], TA = 25°C Symbol GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions Id = 60 mA, ZO = 50 Ω Units Min. Typ. Max. Power Gain \|S21\| 2 Gain Flatness f = GHz f = to GHz 3 dB Bandwidth[2] Input VSWR f = to GHz Output VSWR f = to GHz 50 Ω Noise Figure Ordering Information Part Numbers MSA-1120 No. of Devices 100 Comments Bulk 200 mil BeO Package Dimensions GROUND 45° RF INPUT NO REFERENCE GROUND RF OUTPUT AND BIAS unless otherwise specified Dimensions are in Tolerances in .xxx = ± mm .xx = ± ± ± For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2748EN AV02-1234EN May 14, 2008

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MSA-1120 Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems.
• High Dynamic Range Cascadable 50Ω or 75Ω Gain Block
• 3 dB Bandwidth 50 MHz to GHz
• dBm Typical P1 dB at GHz
• 12 dB Typical 50 Ω Gain at GHz
• dB Typical Noise Figure at GHz
• Hermetic Metal/Beryllia Microstrip Package

The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, and reliability. The use of an external bias resistor for temperature and current stability also bias flexibility.
200 mil BeO Package

Typical Biasing Configuration

R bias

VCC > 8 V

C block IN
3 1 MSA

RFC Optional

C block Vd = V

MSA-1120 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current Power Dissipation[2,3]
100 mA 650 mW

RF Input Power
+13 dBm

Junction Temperature 200°C

Storage Temperature
to 200°C

Permanent damage may occur if any of these limits are exceeded.

TCASE = 25°C. Derate at mW/°C for TC > 161°C. The small spot size of this technique results in a higher, though more accurate determination
of than do alternate methods.

Thermal Resistance[2,4] = 60°C/W

Electrical Specifications[1], TA = 25°C

Symbol GP f3 dB

VSWR

NF P1 dB IP3 tD Vd dV/dT

Parameters and Test Conditions Id = 60 mA, ZO = 50 Ω

Units Min. Typ. Max.

Power Gain |S21| 2 Gain Flatness
f = GHz f = to GHz
3 dB Bandwidth[2]

Input VSWR
f = to GHz

Output VSWR
f = to GHz
50 Ω Noise Figure
Ordering Information

Part Numbers MSA-1120

No. of Devices 100

Comments Bulk
200 mil BeO Package Dimensions

GROUND
45°

RF INPUT

NO REFERENCE

GROUND

RF OUTPUT AND BIAS
unless otherwise specified

Dimensions are in

Tolerances
in .xxx = ±
mm .xx = ±
± ±

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2748EN AV02-1234EN May 14, 2008

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MSA-1120 Datasheet file may be downloaded here without warranties.

Datasheet ID: MSA-1120 520485