MSA-0636-TR1G

MSA-0636-TR1G Datasheet

MSA-0636

Part	Datasheet
MSA-0636-TR1G	MSA-0636-TR1G (pdf)

Related Parts	Information
MSA-0636-BLKG	MSA-0636-BLKG

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MSA-0636 Cascadable Silicon Bipolar MMIC Amplifiers Data Sheet The MSA-0636 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. • Cascadable Gain Block • Low Operating Voltage V Typical Vd • 3 dB Bandwidth DC to GHz • High Gain dB Typical at GHz • Low Noise Figure dB Typical at GHz • Cost Effective Ceramic Microstrip Package 36 micro-X Package Typical Biasing Configuration R bias VCC > 5 V C block IN 3 1 MSA RFC Optional C block Vd = V MSA-0636 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current Power Dissipation[2,3] 50 mA 200 mW RF Input Power +13 dBm Junction Temperature Storage Temperature[4] 150°C to 150°C Notes Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 169°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. Thermal Resistance[2,5] = 155°C/W Electrical Specifications[1], TA = 25°C Parameters and Test Conditions Id = 16 mA, ZO = 50 Power Gain \|S21\| 2 f = GHz Gain Flatness f = to GHz f3 dB 3 dB Bandwidth Ordering Information Part Numbers No. of Devices MSA-0636-BLKG MSA-0636-TR1G 1000 Comments Bulk 7" Reel MSA-0636 Typical Scattering Parameters ZO = 50 TA = 25°C, Id = 16 mA Freq. dB Mag Ang dB Mag Ang Mag Ang 171 5 161 8 152 14 144 19 136 21 128 24 115 29 103 31 79 30 60 26 48 27 34 24 21 19 Typical Performance, TA = 25°C unless otherwise noted Gain Flat to DC 18 15 12 G p dB FREQUENCY GHz Figure Typical Power Gain vs. Frequency, Id = 16 mA. 1 0 +25 P1 dB 0 +85 +125 TEMPERATURE °C Figure Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = GHz, Id = 16 mA. NF dB P1 dB dBm Id mA 25 TC = +125°C TC = +25°C 20 TC = Figure Device Current vs. Voltage.

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MSA-0636

Cascadable Silicon Bipolar MMIC Amplifiers

Data Sheet

The MSA-0636 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.

The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
• Cascadable Gain Block
• Low Operating Voltage V Typical Vd
• 3 dB Bandwidth DC to GHz
• High Gain dB Typical at GHz
• Low Noise Figure dB Typical at GHz
• Cost Effective Ceramic Microstrip Package
36 micro-X Package

Typical Biasing Configuration

R bias

VCC > 5 V

C block IN
3 1 MSA

RFC Optional

C block Vd = V

MSA-0636 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current Power Dissipation[2,3]
50 mA 200 mW

RF Input Power
+13 dBm

Junction Temperature Storage Temperature[4]
150°C to 150°C

Notes Permanent damage may occur if any of these limits are exceeded.

TCASE = 25°C. Derate at mW/°C for TC > 169°C. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.

The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods.

Thermal Resistance[2,5] = 155°C/W

Electrical Specifications[1], TA = 25°C

Parameters and Test Conditions Id = 16 mA, ZO = 50

Power Gain |S21| 2
f = GHz

Gain Flatness
f = to GHz
f3 dB
3 dB Bandwidth
Ordering Information

Part Numbers No. of Devices

MSA-0636-BLKG

MSA-0636-TR1G
1000

Comments Bulk 7" Reel

MSA-0636 Typical Scattering Parameters ZO = 50 TA = 25°C, Id = 16 mA

Freq.
dB Mag Ang
dB Mag Ang

Mag Ang
171 5
161 8
152 14
144 19
136 21
128 24
115 29
103 31
79 30
60 26
48 27
34 24
21 19

Typical Performance, TA = 25°C
unless otherwise noted

Gain Flat to DC 18
15 12

G p dB

FREQUENCY GHz

Figure Typical Power Gain vs. Frequency, Id = 16 mA.
1 0 +25

P1 dB
0 +85 +125

TEMPERATURE °C

Figure Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = GHz, Id = 16 mA.

NF dB P1 dB dBm

Id mA
25 TC = +125°C TC = +25°C
20 TC =

Figure Device Current vs. Voltage.

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Datasheet ID: MSA-0636-TR1G 520471