AT-42085G

AT-42085G Datasheet

AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Part	Datasheet
AT-42085G	AT-42085G (pdf)

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AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost diameter plastic package.The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. • High Output Power dBm Typical P1 dB at GHz • High Gain at 1 dB Compression dB Typical G1 dB at GHz • Low Noise Figure dB Typical NFO at GHz • High Gain-Bandwidth Product GHz Typical fT • Low Cost Plastic Package • Lead-free Option Available The AT-42085 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. 85 Plastic Package AT-42085 Absolute Maximum Ratings Parameter Units Absolute Maximum[1] VEBO Emitter-Base Voltage VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature TSTG Storage Temperature -65 to 150 Thermal Resistance [2,4]: = 130°C/W Notes Permanent damage may occur if any of these limits are exceeded. Tcase = 25°C. Derate at mW/°C for Tc > 85°C. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Parameters and Test Conditions Units Min. Typ. Max. \|S21E\| 2 Insertion Power Gain VCE = 8 V, IC = 35 mA f = GHz f = GHz f = GHz P1 dB Ordering Information Part Numbers No. of Devices AT-42085 AT-42085G Note Order part number with a “G” suffix if lead-free option is desired. 85 Plastic Package Dimensions EMITTER 4 ± ± 45° 1 BASE 3 COLLECTOR ± ± EMITTER 2 unless otherwise specified Dimensions are in Tolerances in .xxx = ± mm .xx = ± 5° TYP. ± ± For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2655EN AV02-1219EN May 5, 2008

PDF Datasheet Preview

AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Data Sheet

Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost diameter plastic package.The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier.
• High Output Power dBm Typical P1 dB at GHz
• High Gain at 1 dB Compression dB Typical G1 dB at GHz
• Low Noise Figure dB Typical NFO at GHz
• High Gain-Bandwidth Product GHz Typical fT
• Low Cost Plastic Package
• Lead-free Option Available

The AT-42085 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device.
85 Plastic Package

AT-42085 Absolute Maximum Ratings

Parameter

Units

Absolute Maximum[1]

VEBO

Emitter-Base Voltage

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

Collector Current

Power Dissipation [2,3]

Junction Temperature

TSTG

Storage Temperature
-65 to 150

Thermal Resistance [2,4]:
= 130°C/W

Notes Permanent damage may occur if any of
these limits are exceeded. Tcase = 25°C. Derate at mW/°C for Tc > 85°C. See MEASUREMENTS section “Thermal

Resistance” for more information.

Electrical Specifications, TA = 25°C

Parameters and Test Conditions

Units Min. Typ. Max.
|S21E| 2

Insertion Power Gain VCE = 8 V, IC = 35 mA
f = GHz
f = GHz
f = GHz

P1 dB
Ordering Information

Part Numbers

No. of Devices

AT-42085

AT-42085G

Note Order part number with a “G” suffix if lead-free option is desired.
85 Plastic Package Dimensions

EMITTER 4
± ±
45°
1 BASE
3 COLLECTOR
± ±

EMITTER 2
unless otherwise specified

Dimensions are in

Tolerances
in .xxx = ±
mm .xx = ±
5° TYP.
± ±

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2655EN AV02-1219EN May 5, 2008

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT-42085G Datasheet file may be downloaded here without warranties.

Datasheet ID: AT-42085G 520188