AT-42035G
AT-42035G Datasheet
AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor
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AT-42035G |
AT-42035G (pdf) |
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| AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet AvagoTechnologies' requencyperformance. The is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42035 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. • High Output Power dBm Typical P1 dB at GHz dBm Typical P1 dB at GHz • High Gain at 1 dB Compression dB Typical G1 dB at GHz dB Typical G1 dB at GHz • Low Noise Figure dB Typical NFO at GHz • High Gain-Bandwidth Product GHz Typical fT • Cost Effective Ceramic Microstrip Package 35 micro-X Package AT-42035 Absolute Maximum Ratings [1] Parameter Absolute Units Maximum VEBO VCBO VCEO IC PT Tj TSTG Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature[4] -65 to 150 Notes Permanent damage may occur if any of these limits are exceeded. Tcase = 25°C. Derate at mW/°C for Tc > 95°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Thermal Resistance [2,5] = 175°C/W Electrical Specifications, TA = 25°C Parameters and Test Conditions[1] Units Min. Typ. Max. |S21E|2 Insertion Power Gain VCE = 8 V, IC = 35 mA f = GHz f = GHz P1 dB Power Output 1 dB Gain Compression VCE = 8 V, IC = 35 mA G1 dB 1 dB Compressed Gain VCE = 8 V, IC = 35 mA f = GHz f= GHz f = GHz f = GHz Optimum Noise Figure VCE = 8 V, IC = 10 mA f = GHz f = GHz Gain NFO VCE = 8 V, IC = 10 mA Ordering Information Part Numbers AT-42035G No. of Devices 100 35 micro-X Package Dimensions BASE 1 4 EMITTER DIA. 016 3 COLLECTOR 2 EMITTER unless otherwise specified Dimensions Tolerances in mm in .xxx = mm .xx = For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2652EN AV02-0299EN - April 29, 2008 |
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