MSA-0486-BLKG

MSA-0486-BLKG Datasheet

MSA-0486 Cascadable Silicon Bipolar MMIC Amplifier

Part	Datasheet
MSA-0486-BLKG	MSA-0486-BLKG (pdf)

Related Parts	Information
MSA-0486-TR2G	MSA-0486-TR2G
MSA-0486-TR1G	MSA-0486-TR1G

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MSA-0486 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-0486 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. • Lead-free Option Available • Cascadable 50 Gain Block • 3 dB Bandwidth DC to GHz • 8 dB Typical Gain at GHz • dBm Typical P1 dB at GHz • Unconditionally Stable k>1 • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available 86 Plastic Package Typical Biasing Configuration Rbias VCC V Cblock IN 3 1 MSA RFC Optional Cblock OUT Vd = V MSA-0486 Absolute Maximum Ratings Parameter Device Current Power Dissipation [2, 3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum [1] 85 mA 500 mW +13 dBm 150° C -65 to 150° C Thermal Resistance [2, 4] = 100°C/W Notes Permanent damage may occur if any of these limits are exceeded. TCASE = 25° C. Derate at mW/°C for TC > 100° C. Electrical Specifications[1], TA = 25° C Symbol GP Parameters and Test Conditions Id = 50 mA, ZO = 50 Power Gain \|S21\|2 f = GHz f = GHz Units Min. Typ. Max. f3 dB VSWR Gain Flatness 3 dB Bandwidth[2] Input VSWR f = to GHz f = to GHz Output VSWR f = to GHz 50 Noise Figure f = GHz P1dB IP3 tD Vd dV/dT Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = GHz f = GHz f = GHz psec Ordering Information Part Numbers No. of Devices Comments MSA-0486-BLK Bulk MSA-0486-BLKG Bulk MSA-0486-TR1 1000 7" Reel MSA-0486-TR1G 1000 7" Reel MSA-0486-TR2 4000 13" Reel MSA-0486-TR2G 4000 13" Reel Note Order part number with a “G” suffix if lead-free option is desired. MSA-0486 Typical Scattering Parameters ZO = 50 TA = 25° C, Id = 50 mA Freq. -121 -149 -168 Typical Performance, TA = 25° C unless otherwise noted 10 TC = +85° C TC = +25° C TC = C Gp dB Id mA Id = 30 mA Id = 50 mA Id = 70 mA Gain Flat to DC 0 FREQUENCY GHz Figure Typical Power Gain vs Frequency, TA = 25° C. Figure Device Current vs. Voltage. P1 dB dBm 12 P1 dB

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MSA-0486 Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

The MSA-0486 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.

The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
• Lead-free Option Available
• Cascadable 50 Gain Block
• 3 dB Bandwidth DC to GHz
• 8 dB Typical Gain at GHz
• dBm Typical P1 dB at GHz
• Unconditionally Stable k>1
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available
86 Plastic Package

Typical Biasing Configuration

Rbias

VCC V

Cblock IN
3 1 MSA

RFC Optional

Cblock OUT

Vd = V

MSA-0486 Absolute Maximum Ratings Parameter

Device Current Power Dissipation [2, 3] RF Input Power Junction Temperature Storage Temperature

Absolute Maximum [1] 85 mA 500 mW +13 dBm 150° C -65 to 150° C

Thermal Resistance [2, 4] = 100°C/W

Notes Permanent damage may occur if
any of these limits are exceeded. TCASE = 25° C. Derate at mW/°C for TC >
100° C.

Electrical Specifications[1], TA = 25° C

Symbol GP

Parameters and Test Conditions Id = 50 mA, ZO = 50

Power Gain |S21|2
f = GHz f = GHz

Units Min.

Typ.

Max.
f3 dB VSWR

Gain Flatness 3 dB Bandwidth[2] Input VSWR
f = to GHz
f = to GHz

Output VSWR
f = to GHz
50 Noise Figure
f = GHz

P1dB IP3 tD Vd dV/dT

Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient
f = GHz f = GHz f = GHz
psec
Ordering Information

Part Numbers

No. of Devices Comments

MSA-0486-BLK

Bulk

MSA-0486-BLKG

Bulk

MSA-0486-TR1
1000
7" Reel

MSA-0486-TR1G
1000
7" Reel

MSA-0486-TR2
4000
13" Reel

MSA-0486-TR2G
4000
13" Reel

Note Order part number with a “G” suffix if lead-free option is desired.

MSA-0486 Typical Scattering Parameters ZO = 50 TA = 25° C, Id = 50 mA

Freq.
-121
-149
-168

Typical Performance, TA = 25° C
unless otherwise noted 10

TC = +85° C

TC = +25° C

TC = C

Gp dB

Id mA

Id = 30 mA

Id = 50 mA

Id = 70 mA

Gain Flat to DC 0

FREQUENCY GHz

Figure Typical Power Gain vs Frequency, TA = 25° C.

Figure Device Current vs. Voltage.

P1 dB dBm
12 P1 dB

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Datasheet ID: MSA-0486-BLKG 520465