AT-41535G

AT-41535G Datasheet

AT-41535 Up to 6 GHz Low Noise Silicon Bipolar Transistor

Part	Datasheet
AT-41535G	AT-41535G (pdf)

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AT-41535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description/Applications The AT-41535 of Avago Techologies is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41535 is house in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 15 emitter fingers interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 ??at 1GHz, makes this device easy to use as a low noise amplifier. The AT-41535 bipolar transistor is fabricated using Avago Technologies’ 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-alignment techniques, and gold metallization in the fabrication of this device. • Low Noise Figure - dB typical at GHz - dB typical at GHz • High Associated Gain - dB typical at 2.0GHz - dB typical at GHz • High Gain-Bandwidth Product - GHz typical fT • Cost Effective Ceramic Micro-strip Package 35 micro-X Package Table Absolute Maximum Ratings [1] at Tc = +25°C Symbol Parameter Unit Max Rating VEBO VCBO VCEO IC PT Tj Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2] Junction Temperature Tstg Storage Temperature -60 to 150 Thermal Resistance[5] °C/W Notes Operation in excess of any one of these conditions may result in permanent damage to the device. = 25°C Derate at 8 mW/°C for Tc>87.5°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. Thermal Resistance is measured using IR Microscopy method. Table Electrical Specifications at Tc = +25°C, VCE=8V Symbol \|S21E\|2 Parameter and Test Condition Insertion Power Gain VCE=8V, Ic=25mA P1dB G1dB NFo Power Output Gain Compression VCE=8V, Ic=25 mA 1 dB Compressed Gain VCE=8V, Ic=25 mA Optimum Noise Figure VCE=8V, Ic = 10 mA Gain NFo ; VCE=8V, Ic=10mA Gain Bandwidth Product Ic = 25 mA Forward Current Transfer Ratio: VCE=8V, Ic = 10 mA ICBO Collector Cutoff Current VCB = 8 V IEBO Emitter Cutoff Current VEB = 1 V CcBO Collector Base Capacitance[1]: VCB=8V,F=1MHz Part Number Ordering Information Part number AT-41535G No of Devices 100 35 micro-X Package Dimensions 4 EMITTER DIA. BASE 1 ± ± COLLECTOR 2 EMITTER unless otherwise specified Dimensions are in Tolerances mm in .xxx = ± mm .xx = ± ± ± For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0144EN AV02-1216EN - April 29, 2008

PDF Datasheet Preview

AT-41535 Up to 6 GHz Low Noise Silicon Bipolar Transistor

Data Sheet

Description/Applications

The AT-41535 of Avago Techologies is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41535 is house in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 15 emitter fingers interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 ??at 1GHz, makes this device easy to use as a low noise amplifier.

The AT-41535 bipolar transistor is fabricated using Avago Technologies’ 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-alignment techniques, and gold metallization in the fabrication of this device.
• Low Noise Figure - dB typical at GHz - dB typical at GHz
• High Associated Gain - dB typical at 2.0GHz - dB typical at GHz
• High Gain-Bandwidth Product - GHz typical fT
• Cost Effective Ceramic Micro-strip Package
35 micro-X Package

Table Absolute Maximum Ratings [1] at Tc = +25°C

Symbol Parameter

Unit

Max Rating

VEBO VCBO VCEO IC PT Tj

Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2] Junction Temperature

Tstg

Storage Temperature
-60 to 150

Thermal Resistance[5]
°C/W

Notes Operation in excess of any one of these conditions may result in permanent damage to the device. = 25°C Derate at 8 mW/°C for Tc>87.5°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. Thermal Resistance is measured using IR Microscopy method.

Table Electrical Specifications at Tc = +25°C, VCE=8V

Symbol |S21E|2

Parameter and Test Condition Insertion Power Gain VCE=8V, Ic=25mA

P1dB G1dB NFo

Power Output Gain Compression VCE=8V, Ic=25 mA
1 dB Compressed Gain VCE=8V, Ic=25 mA

Optimum Noise Figure VCE=8V, Ic = 10 mA

Gain NFo ;

VCE=8V, Ic=10mA

Gain Bandwidth Product Ic = 25 mA

Forward Current Transfer Ratio:

VCE=8V, Ic = 10 mA

ICBO

Collector Cutoff Current VCB = 8 V

IEBO

Emitter Cutoff Current VEB = 1 V

CcBO

Collector Base Capacitance[1]:

VCB=8V,F=1MHz
Part Number Ordering Information

Part number AT-41535G

No of Devices 100
35 micro-X Package Dimensions
4 EMITTER

DIA.

BASE 1
± ±

COLLECTOR
2 EMITTER
unless otherwise specified

Dimensions are in

Tolerances mm in .xxx = ±
mm .xx = ±
± ±

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0144EN AV02-1216EN - April 29, 2008

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT-41535G Datasheet file may be downloaded here without warranties.

Datasheet ID: AT-41535G 520181