AT-41511-BLKG

AT-41511-BLKG Datasheet

AT-41511, AT-41533

Part	Datasheet
AT-41511-BLKG	AT-41511-BLKG (pdf)

Related Parts	Information
AT-41533-BLKG	AT-41533-BLKG
AT-41511-TR2G	AT-41511-TR2G
AT-41533-TR2G	AT-41533-TR2G
AT-41533-TR1G	AT-41533-TR1G
AT-41511-TR1G	AT-41511-TR1G

PDF Datasheet Preview
AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors Data Sheet Avago’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that excellent high frequency performance at an economical price. The AT-41533 uses the 3 lead SOT-23, while the AT-41511 places the same die in the lower parasitic 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 4 micron emitter-to-emitter pitch of these transistors yields high performance products that can perform a multiplicity of tasks. The 14 emitter interdigitated geometry yields an intermediate-sized transistor with easy to match to impedances, low noise and moderate power. Optimized for best performace from a 5 to 8 volt bias supply, these transistors are also good performers at V. Applications include use in wireless systems as an LNA, gain stage, oscillator, or active mixer. An optimum noise match near 50 ohms at 900 MHz makes these devices particularly easy to use as LNAs. Typical designs at 900 MHz yield 1 dB noise with 15 dB or more associated gain at a 5 V, 5 mA bias, with good gain and noise obtainable at biases as low as 2 mA. The AT-415 series bipolar transistors are fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. x General Purpose NPN Bipolar Transistor x 900 MHz Performance: AT-41511 1 dB NF, dB GA AT-41533 1 dB NF, dB GA x Characterized for 3, 5, and 8 Volt Use x SOT-23 and SOT-143 SMT Plastic Packages x Tape-and-Reel Packaging Option Available x Lead-free Pin Connections and Package Marking EMITTER COLLECTOR 415x BASE EMITTER SOT 143 AT-41511 COLLECTOR 415x BASE EMITTER SOT 23 AT-41533 Notes Top View. Package Marking provides orientation and "x" is the date code. AT-41511, AT-41533 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2,3] Junction Temperature Storage Temperature Units V mA mW °C °C Absolute Maximum[1] 20 12 50 225 150 -65 to 150 Thermal Resistance:[2] Tjc =550°C/W Notes Operation of this device above any one of these parameters may cause permanent damage. TMounting Surface = 25°C. Derate at mW/°C for TC > 26°C. Electrical TA = 25°C Symbol hFE Parameters and Test Conditions Forward Current Transfer Ratio ICBO Collector Current IEBO Emitter Current VCE = 5 V IC = 5 mA VCB = 3 V VEB = 1 V AT-41511 Units Min Typ Max 30 150 270 AT-41533 Min Typ Max 30 150 270 Ordering Information Part Numbers AT-41511-BLKG AT-41511-TR1G AT-41511-TR2G AT-41533-BLKG AT-41533-TR1G AT-41533-TR2G No. of Devices 100 3000 10000 Comments Bulk 7" Reel 13" Reel Package Dimensions SOT-23 Plastic Package e2 e1 Notes XXX-package marking Drawings are not to scale DIMENSIONS mm SYMBOL MIN. MAX. SOT-143 Plastic Package e2 e1 Notes XXX-package marking Drawings are not to scale DIMENSIONS mm SYMBOL A A1 B B1 C D E1 e e1 e2 E L MIN. MAX. For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-2649EN AV02-0798EN - December 23, 2009

PDF Datasheet Preview

AT-41511, AT-41533

General Purpose, Low Noise NPN Silicon Bipolar Transistors

Data Sheet

Avago’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that excellent high frequency performance at an economical price. The AT-41533 uses the 3 lead SOT-23, while the AT-41511 places the same die in the lower parasitic 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The 4 micron emitter-to-emitter pitch of these transistors yields high performance products that can perform a multiplicity of tasks. The 14 emitter interdigitated geometry yields an intermediate-sized transistor with easy to match to impedances, low noise and moderate power.

Optimized for best performace from a 5 to 8 volt bias supply, these transistors are also good performers at V. Applications include use in wireless systems as an LNA, gain stage, oscillator, or active mixer.

An optimum noise match near 50 ohms at 900 MHz makes these devices particularly easy to use as LNAs. Typical designs at 900 MHz yield 1 dB noise with 15 dB or more associated gain at a 5 V, 5 mA bias, with good gain and noise obtainable at biases as low as 2 mA.

The AT-415 series bipolar transistors are fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices.
x General Purpose NPN Bipolar Transistor x 900 MHz Performance:

AT-41511 1 dB NF, dB GA AT-41533 1 dB NF, dB GA x Characterized for 3, 5, and 8 Volt Use x SOT-23 and SOT-143 SMT Plastic Packages x Tape-and-Reel Packaging Option Available x Lead-free

Pin Connections and Package Marking

EMITTER COLLECTOR
415x

BASE EMITTER SOT 143 AT-41511

COLLECTOR
415x

BASE EMITTER SOT 23 AT-41533

Notes Top View. Package Marking provides orientation and "x" is the date code.

AT-41511, AT-41533 Absolute Maximum Ratings

Symbol VEBO VCBO VCEO IC PT Tj TSTG

Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2,3] Junction Temperature Storage Temperature

Units V mA
mW °C °C

Absolute Maximum[1]
20 12 50 225 150 -65 to 150

Thermal Resistance:[2]

Tjc =550°C/W

Notes Operation of this device above any one of
these parameters may cause permanent damage. TMounting Surface = 25°C. Derate at mW/°C for TC > 26°C.

Electrical TA = 25°C

Symbol hFE

Parameters and Test Conditions Forward Current Transfer Ratio

ICBO

Collector Current

IEBO

Emitter Current

VCE = 5 V IC = 5 mA VCB = 3 V VEB = 1 V

AT-41511

Units Min Typ Max
30 150 270

AT-41533 Min Typ Max 30 150 270
Ordering Information

Part Numbers AT-41511-BLKG AT-41511-TR1G AT-41511-TR2G

AT-41533-BLKG AT-41533-TR1G AT-41533-TR2G

No. of Devices 100 3000 10000

Comments Bulk 7" Reel
13" Reel

Package Dimensions SOT-23 Plastic Package
e2 e1

Notes XXX-package marking Drawings are not to scale

DIMENSIONS mm

SYMBOL MIN.

MAX.

SOT-143 Plastic Package
e2 e1

Notes XXX-package marking Drawings are not to scale

DIMENSIONS mm

SYMBOL A A1 B B1 C D E1 e e1 e2 E L

MIN.

MAX.

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-2649EN AV02-0798EN - December 23, 2009

More datasheets: U86-D4127-10121 | U86-D6127-10121 | 923 | 974 | AK8996 | AK8996W | 10953 | AT-41533-BLKG | AT-41511-TR2G | AT-41533-TR2G

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Datasheet ID: AT-41511-BLKG 520180