AT-41500-GP4

AT-41500-GP4 Datasheet

AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip

Part	Datasheet
AT-41500-GP4	AT-41500-GP4 (pdf)

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AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 15 emitter fingers interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 at 1GHz, makes this device easy to use as a low noise amplifier. The AT-41500 bipolar transistor is fabricated using Avago Technologies’ 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-alignment techniques, and gold metallization in the fabrication of this device. Performance in 86 plastic package • Low Noise Figure dB typical at 1 GHz dB typical at 2 GHz • High Associated Gain dB typical at 1GHz dB typical at 2 GHz • High Gain-Bandwidth Product GHz typical fT Chip Outline 2002 Table Absolute Maximum Ratings [1] Symbol VEBO VCBO VCEO IC PT TJ TSTG qjc Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2, 3] Junction Temperature Storage Temperature Thermal Resistance [2, 4] Unit V mA mW °C °C °C/W Max Rating 20 12 60 500 200 -60 to 200 95 Operation in excess of any one of these conditions may result in permanent damage to the device. SURFACE = 25 °C Derate at mW/°C for SURFACE > 153 °C. The small spot size of this technique results in a higher, though more accurate determination of than do the alternate method. Table Electrical Specifications at TA = +25°C, VCE=8V Symbol Parameter and Test Condition Optimum Noise Figure Ic = 10 mA Units Min. Typ. Max. f = GHz dB f = GHz dB f = GHz dB Gain NFo Ic=10mA f = GHz dB f = GHz dB f = GHz dB \|S21E\|2 Insertion Power Gain Ic = 25 mA f = GHz dB f = GHz dB P1dB Power Output Gain Compression:Ic=25 mA f = GHz dBm G1dB 1 dB Compressed Gain Ic = 25 mA f = GHz dB Gain Bandwidth Product Ic = 25 mA Forward Current Transfer Ratio Ic = 10 mA ICBO Collector Cutoff Current VCB = 8 V IEBO Emitter Cutoff Current VEB = 1 V Part Number Ordering Information Part number AT-41500-GP4 Devices Per Tray 100 AT-41500 Chip Dimensions mm 10 mils Base Pad 2002 mm 4 mils Emitter Pad S415 Note Die Thickness is 5 ~ 6 mils mm 10 mils C M .045mm mils For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved. Obsoletes AV01-0438EN AV02-1844EN - March 26, 2009

PDF Datasheet Preview

AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip

Data Sheet

Description/Applications

The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 15 emitter fingers interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 at 1GHz, makes this device easy to use as a low noise amplifier.

The AT-41500 bipolar transistor is fabricated using Avago Technologies’ 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-alignment techniques, and gold metallization in the fabrication of this device.

Performance in 86 plastic package
• Low Noise Figure
dB typical at 1 GHz dB typical at 2 GHz
• High Associated Gain dB typical at 1GHz dB typical at 2 GHz
• High Gain-Bandwidth Product GHz typical fT

Chip Outline
2002

Table Absolute Maximum Ratings [1]

Symbol VEBO VCBO VCEO IC PT TJ TSTG qjc

Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2, 3] Junction Temperature Storage Temperature Thermal Resistance [2, 4]

Unit V mA mW °C °C °C/W

Max Rating 20 12 60 500 200 -60 to 200 95

Operation in excess of any one of these conditions may result in permanent damage to the device. SURFACE = 25 °C Derate at mW/°C for SURFACE > 153 °C. The small spot size of this technique results in a higher, though more accurate determination of than do the alternate method.

Table Electrical Specifications at TA = +25°C, VCE=8V

Symbol Parameter and Test Condition

Optimum Noise Figure Ic = 10 mA

Units Min.

Typ.

Max.
f = GHz dB
f = GHz dB
f = GHz dB

Gain NFo Ic=10mA
f = GHz dB
f = GHz dB
f = GHz dB
|S21E|2 Insertion Power Gain Ic = 25 mA
f = GHz dB
f = GHz dB

P1dB Power Output Gain Compression:Ic=25 mA
f = GHz dBm

G1dB 1 dB Compressed Gain Ic = 25 mA
f = GHz dB

Gain Bandwidth Product Ic = 25 mA

Forward Current Transfer Ratio Ic = 10 mA

ICBO

Collector Cutoff Current VCB = 8 V

IEBO

Emitter Cutoff Current VEB = 1 V
Part Number Ordering Information

Part number AT-41500-GP4

Devices Per Tray 100

AT-41500 Chip Dimensions
mm 10 mils

Base Pad
2002
mm 4 mils

Emitter Pad

S415 Note Die Thickness is 5 ~ 6 mils
mm 10 mils

C M .045mm mils

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved. Obsoletes AV01-0438EN AV02-1844EN - March 26, 2009

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT-41500-GP4 Datasheet file may be downloaded here without warranties.

Datasheet ID: AT-41500-GP4 520178