AT-30533-TR1G

AT-30533-TR1G Datasheet

Agilent AT-30511, AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistors

Part	Datasheet
AT-30533-TR1G	AT-30533-TR1G (pdf)

Related Parts	Information
AT-30511-BLKG	AT-30511-BLKG
AT-30511-TR1G	AT-30511-TR1G
AT-30533-BLKG	AT-30533-BLKG
AT-30533-TR2G	AT-30533-TR2G
AT-30511-TR2G	AT-30511-TR2G

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Agilent AT-30511, AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistors Data Sheet Agilent’s AT-30511 and AT-30533 are high performance NPN bipolar transistors that have been optimized for maximum fT at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-30533 uses the 3 lead SOT-23, while the AT-30511 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. Outline Drawing EMITTER COLLECTOR BASE EMITTER SOT-143 AT-30511 COLLECTOR BASE EMITTER SOT-23 AT-30533 • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance AT-30511 dB NF, 16 dB GA AT-30533 dB NF, 13 dB GA • Characterized for End-OfLife Battery Use V • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available • Lead-free Option Available The micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 5 emitter finger interdigitated geometry yields an extremely fast transistor with high gain and low operating currents. Optimized performance at V makes these devices ideal for use in 900 MHz, GHz, and GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield dB noise figures with 13 dB or more associated gain at a V, 1 mA bias. Voltage breakdowns are high enough for use at 5 volts. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. The AT-3 series bipolar transistors are fabricated using an optimized version of Agilent’s 10 GHz fT, 30 GHz fMAX Self-AlignedTransistor SAT process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. AT-30511, AT-30533 Absolute Maximum Ratings Parameter Units Absolute Maximum[1] VEBO Emitter-Base Voltage VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage V IC Collector Current PT Power Dissipation[2] [3] Tj Junction Temperature TSTG Storage Temperature 11 8 100 150 -65 to 150 Operation of this device above any one of these parameters may cause permanent damage. TMounting Surface = 25°C. Derate at mW/°C for TC > 95°C. Thermal Resistance[2] = 550°C/W Electrical Specifications, TA = 25°C Parameters and Test Conditions AT-30511 Units Min Typ Max NF Noise Figure VCE = V, IC = 1 mA GA Associated Gain VCE = V, IC = 1 mA hFE Forward Current Transfer Ratio ICBO Collector Cutoff Current IEBO Emitter Cutoff Current f = GHz dB Ordering Information Part Numbers No. of Devices Comments AT-30511-BLK AT-30533-BLK Bulk AT-30511-BLKG AT-30533-BLKG Bulk AT-30511-TR1 AT-30533-TR1 3000 7" Reel AT-30511-TR1G AT-30533-TR1G 3000 7" Reel AT-30511-TR2 AT-30533-TR2 10000 13" Reel AT-30511-TR2G AT-30533-TR2G 10000 13" Reel Note Order part number with a “G” suffix if lead-free option is desired. Package Dimensions SOT-23 Plastic Package e2 e1 Notes XXX-package marking Drawings are not to scale DIMENSIONS mm SYMBOL MIN. MAX. SOT-143 Plastic Package e2 e1 B1 Notes XXX-package marking Drawings are not to scale DIMENSIONS mm SYMBOL A A1 B B1 C D E1 e e1 e2 E L MIN. MAX. e For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada +1 800 235-0312 or 916 788-6763 Europe +49 0 6441 92460 China 10800 650 0017

PDF Datasheet Preview

Agilent AT-30511, AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistors

Data Sheet

Agilent’s AT-30511 and AT-30533 are high performance NPN bipolar transistors that have been optimized for maximum fT at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-30533 uses the 3 lead SOT-23, while the AT-30511 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

Outline Drawing

EMITTER COLLECTOR

BASE EMITTER SOT-143 AT-30511

COLLECTOR

BASE EMITTER SOT-23 AT-30533
• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
• 900 MHz Performance AT-30511 dB NF, 16 dB GA AT-30533 dB NF, 13 dB GA
• Characterized for End-OfLife Battery Use V
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available
• Lead-free Option Available

The micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 5 emitter finger interdigitated geometry yields an extremely fast transistor with high gain and low operating currents.

Optimized performance at V makes these devices ideal for use in 900 MHz, GHz, and GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield dB noise figures with 13 dB or more associated gain at a V, 1 mA
bias. Voltage breakdowns are high enough for use at 5 volts. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications.

The AT-3 series bipolar transistors are fabricated using an optimized version of Agilent’s 10 GHz fT, 30 GHz fMAX Self-AlignedTransistor SAT process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices.

AT-30511, AT-30533 Absolute Maximum Ratings

Parameter

Units Absolute Maximum[1]

VEBO Emitter-Base Voltage

VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage V

IC Collector Current

PT Power Dissipation[2] [3]

Tj Junction Temperature

TSTG Storage Temperature
11 8 100 150 -65 to 150

Operation of this device above any one of these parameters may cause permanent damage.

TMounting Surface = 25°C. Derate at mW/°C for TC > 95°C.

Thermal Resistance[2] = 550°C/W

Electrical Specifications, TA = 25°C

Parameters and Test Conditions

AT-30511 Units Min Typ Max

NF Noise Figure VCE = V, IC = 1 mA

GA Associated Gain VCE = V, IC = 1 mA
hFE Forward Current Transfer Ratio

ICBO Collector Cutoff Current

IEBO Emitter Cutoff Current
f = GHz dB
Ordering Information

Part Numbers

No. of Devices Comments

AT-30511-BLK

AT-30533-BLK

Bulk

AT-30511-BLKG AT-30533-BLKG

Bulk

AT-30511-TR1

AT-30533-TR1
3000
7" Reel

AT-30511-TR1G AT-30533-TR1G
3000
7" Reel

AT-30511-TR2

AT-30533-TR2
10000
13" Reel

AT-30511-TR2G AT-30533-TR2G
10000
13" Reel

Note Order part number with a “G” suffix if lead-free option is desired.

Package Dimensions

SOT-23 Plastic Package
e2 e1

Notes XXX-package marking Drawings are not to scale

DIMENSIONS mm

SYMBOL MIN. MAX.

SOT-143 Plastic Package
e2 e1 B1

Notes XXX-package marking Drawings are not to scale

DIMENSIONS mm

SYMBOL A A1 B B1 C D E1 e e1 e2 E L

MIN.

MAX. e

For product information and a complete list of distributors, please go to our web site.

For technical assistance call:

Americas/Canada +1 800 235-0312 or 916 788-6763

Europe +49 0 6441 92460

China 10800 650 0017

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT-30533-TR1G Datasheet file may be downloaded here without warranties.

Datasheet ID: AT-30533-TR1G 520175