Agilent AT-30511, AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistors
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AT-30533-BLKG (pdf) |
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AT-30533-TR1G |
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AT-30511-BLKG |
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AT-30511-TR1G |
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AT-30533-TR2G |
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AT-30511-TR2G |
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Agilent AT-30511, AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistors Data Sheet Agilent’s AT-30511 and AT-30533 are high performance NPN bipolar transistors that have been optimized for maximum fT at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-30533 uses the 3 lead SOT-23, while the AT-30511 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. Outline Drawing EMITTER COLLECTOR BASE EMITTER SOT-143 AT-30511 COLLECTOR BASE EMITTER SOT-23 AT-30533 • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance AT-30511 dB NF, 16 dB GA AT-30533 dB NF, 13 dB GA • Characterized for End-OfLife Battery Use V • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available • Lead-free Option Available The micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 5 emitter finger interdigitated geometry yields an extremely fast transistor with high gain and low operating currents. Optimized performance at V makes these devices ideal for use in 900 MHz, GHz, and GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield dB noise figures with 13 dB or more associated gain at a V, 1 mA bias. Voltage breakdowns are high enough for use at 5 volts. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. The AT-3 series bipolar transistors are fabricated using an optimized version of Agilent’s 10 GHz fT, 30 GHz fMAX Self-AlignedTransistor SAT process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. AT-30511, AT-30533 Absolute Maximum Ratings Parameter Units Absolute Maximum[1] VEBO Emitter-Base Voltage VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage V IC Collector Current PT Power Dissipation[2] [3] Tj Junction Temperature TSTG Storage Temperature 11 8 100 150 -65 to 150 Operation of this device above any one of these parameters may cause permanent damage. TMounting Surface = 25°C. Derate at mW/°C for TC > 95°C. Thermal Resistance[2] = 550°C/W Electrical Specifications, TA = 25°C Parameters and Test Conditions AT-30511 Units Min Typ Max NF Noise Figure VCE = V, IC = 1 mA GA Associated Gain VCE = V, IC = 1 mA hFE Forward Current Transfer Ratio ICBO Collector Cutoff Current IEBO Emitter Cutoff Current f = GHz dB Ordering Information Part Numbers No. of Devices Comments AT-30511-BLK AT-30533-BLK Bulk AT-30511-BLKG AT-30533-BLKG Bulk AT-30511-TR1 AT-30533-TR1 3000 7" Reel AT-30511-TR1G AT-30533-TR1G 3000 7" Reel AT-30511-TR2 AT-30533-TR2 10000 13" Reel AT-30511-TR2G AT-30533-TR2G 10000 13" Reel Note Order part number with a “G” suffix if lead-free option is desired. Package Dimensions SOT-23 Plastic Package e2 e1 Notes XXX-package marking Drawings are not to scale DIMENSIONS mm SYMBOL MIN. MAX. SOT-143 Plastic Package e2 e1 B1 Notes XXX-package marking Drawings are not to scale DIMENSIONS mm SYMBOL A A1 B B1 C D E1 e e1 e2 E L MIN. MAX. e For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada +1 800 235-0312 or 916 788-6763 Europe +49 0 6441 92460 China 10800 650 0017 |
More datasheets: SFS37S40-7.5K400E-F | SFS37S40-5K400E-F | SFS37S40-15K475E-F | SFS37S40-10K400E-F | SFS37S35-7.5K400E-F | SFS44S15-10K388E-F | SFT37S70-5K491E-F | AT-30533-TR1G | AT-30511-BLKG | AT-30511-TR1G |
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