ALM-1322-TR2G

ALM-1322-TR2G Datasheet


ALM-1322 1.8-2.2GHz Very Low Noise High Gain Balanced Amplifier Module

Part Datasheet
ALM-1322-TR2G ALM-1322-TR2G ALM-1322-TR2G (pdf)
Related Parts Information
ALM-1322-BLKG ALM-1322-BLKG ALM-1322-BLKG
ALM-1322-TR1G ALM-1322-TR1G ALM-1322-TR1G
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ALM-1322 1.8-2.2GHz Very Low Noise High Gain Balanced Amplifier Module

Data Sheet

Avago Technologies’ ALM-1322 is a very low noise, high gain balanced amplifier module operating in the to 2.2GHz frequency range. The exceptional noise performance is achieved through the use of Avago Technologies’ proprietary 0.5um GaAs Enhancement-mode pHEMT process.

The ALM-1322 is housed in a miniature x mm3 22-lead multiple-chips-on-board MCOB module package. The compact footprint and low profile makes this product an ideal choice for Wireless Infrastructure Basestation Tower-Mounted Amplifiers TMA , Radiocards and MultiCarrier Driver Amplifiers in the cellular/PCS/CDMA bands.

Component Image
x mm3 22-lead MCOB

Top View

AVAGO ALM-1322 MAYWWDD

XXXX

Bottom View

Note Package marking provides orientation and identification “ALM-1322”= Device Part Number “YWWDD” = Year, work week and day of
manufacture “XXXX” = Assembly lot number
• Very Low noise figure
• High Gain
• GaAs E-pHEMT Technology[1]
• internal matching
• Small package size 5x6x1.1 mm3
• 5V supply
• Excellent uniformity in product specifications
• Tape-and-Reel packaging option available
• MSL-2a and Lead-free
• Point MTTF > 300 years at 120°C channel temperature
• Specifications
• Diversity Antenna, TMA & Front End LNA for EGSM/ PCS/W-CDMA Base Stations.
• Driver amplifier.

Notes Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices.

Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 50 V ESD Human Body Model = 250 V Refer to Avago Application Note A004R Electrostatic Discharge, Damage and Control.

Absolute Maximum Rating [2] TA=25°C

Symbol Parameter

Device Supply Voltage

Vctrl

Control Voltage

Pin,max

CW RF Input Power Vdd = Vctrl=2.2V

Pdiss

Total Power Dissipation [4]

Junction Temperature

TSTG

Storage Temperature

Units

Absolute Max.
-65 to 150

Thermal Resistance [3] Vdd = 5.0V, Vctrl=2.2V qjc = 27 °C/W

Notes Operation of this device in excess of any of these
limits may cause permanent damage. Thermal resistance measured using Infra-Red

Measurement Technique. Board module belly temperature TB is 25°C.

Derate 37mW/°C for TB>123°C.

Product Consistency Distribution Charts [5,6]

Process Capability for NF 150

Nominal = USL =
Part Number Ordering Information

No. of Devices

ALM-1322-BLKG

ALM-1322-TR1G
1000

ALM-1322-TR2G
3000

Container Antistatic bag 7” Reel 13” Reel

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved. Obsoletes AV01-0059EN AV02-1855EN - April 6, 2009
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Datasheet ID: ALM-1322-TR2G 520084