ACPM-5040-BLK

ACPM-5040-BLK Datasheet


ACPM-5040 3 x 3 mm Power Amplifier Module LTE Band-40 2300-2400 MHz

Part Datasheet
ACPM-5040-BLK ACPM-5040-BLK ACPM-5040-BLK (pdf)
Related Parts Information
ACPM-5040-LG1 ACPM-5040-LG1 ACPM-5040-LG1
ACPM-5040-SG1 ACPM-5040-SG1 ACPM-5040-SG1
ACPM-5040-TR1 ACPM-5040-TR1 ACPM-5040-TR1
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ACPM-5040 3 x 3 mm Power Amplifier Module LTE Band-40 2300-2400 MHz

Data Sheet

The ACPM-5040 is a fully matched 10-pin surface mount Power Amplifier Module developed PAM for TD-LTE Band-40 applications. This power amplifier module operates in the 2300-2400 MHz bandwidth. The ACPM-5040 meets stringent LTE MPR = 0 dB linearity requirements up to dBm output power. The 3 x 3 mm form factor package is self contained, incorporating 50 ohm input and output matching networks.

The ACPM-5040 features the 5th generation of CoolPAM CoolPAM5 circuit technology, which supports 3 power modes active bypass, mid power and high power modes with 2-bit digital control. The CoolPAM is a stage bypass PA technology enhancing PAE power added efficiency in the low and medium power ranges. The active bypass feature is added to CoolPAM-5 to enhance the PAE further in the low output power range and it enables to have exceptionally low quiescent current. It dramatically saves the average power consumption and accordingly extends the talk time of handsets with a given battery capacity.

A high performance directional coupler is integrated into the module and both coupling and isolation ports are available to support daisy chain connection for multiband applications. The integrated coupler has excellent coupler directivity, which minimizes the coupled output power variation or delivered power variation caused by the load mismatch from the antenna. The coupler directivity, or the output power variation into the mismatched load, is critical to the TRP and SAR performance of the mobile phones in real field operations as well as compliance tests for the system certifications.

Vref and a bias switch are integrated in the ACPM-5040, so an external LDO regulator and a bias switch transistor are not required. It also makes the PA fully digitalcontrollable by the Ven pin that simply turns the PA
x Thin Package mm typ. x Excellent Linearity x 3-mode power control with Vbp and Vmode

Bypass / Mid Power Mode / High Power Mode x High Efficiency at max output power x 10-pin surface mounting package x Internal 50 ohm matching networks for both RF input
and output x Integrated coupler

Coupler and Isolation ports for daisy chain x Green Lead-free and RoHS compliant
x TD-LTE Band-40
Ordering Information

ACPM-5040-TR1 ACPM-5040-BLK

Number of Devices 1000

Container
178 mm 7” Tape/Reel Bulk

Description Cont.
on and off from the digital control logic input from a baseband chip. All of the digital control input pins such as the Ven, Vmode and Vbp are fully CMOS logic compatible and “Hi” logic state can operate down to V. The current consumption by digital control pins is negligible.

This power amplifier is fabricated with an advanced InGaP HBT hetero-junction Bipolar Transistor MMIC microwave monolithic integrated circuit process, offering state-ofthe-art reliability, temperature stability and ruggedness.

Absolute Maximum Ratings

No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value

Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal values may result in permanent damage.

Description RF Input Power Pin DC Supply Voltage Vcc1, Vcc2 Enable Voltage Ven Mode Control Voltage Vmode Bypass Control Vbp Storage Temperature Tstg

Min.

Typ.

Max.

Unit
+125

Recommended Operating Condition

Min.

Typ.

DC Supply Voltage Vcc1, Vcc2

Enable Voltage Ven

High

Mode Control Voltage Vmode

High

Bypass Control Voltage Vbp

High

Operating Frequency fo
2300

Ambient Temperature Ta

Max.

Unit
2400

Operating Logic Table

Power Mode

High Power Mode

High

Mid Power Mode

High

Bypass Mode

High
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Datasheet ID: ACPM-5040-BLK 519871