TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS
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TIP35C-S (pdf) |
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TIP35A-S |
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TIP35B-S |
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TIP35-S |
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TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING VALUE UNIT TIP35 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range TIP35A TIP35B TIP35C TIP35 TIP35A TIP35B TIP35C VCBO VCEO VEBO IC ICM IB Ptot Tj Tstg Lead temperature mm from case for 10 seconds 100 V -65 to +150 -65 to +150 NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = A, RBE = 100 VBE off = 0, RS = VCC = 20 V. PRODUCT INFORMATION TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX TIP35 Collector-emitter V BR CEO breakdown voltage IC = 30 mA see Note 5 IB = 0 TIP35A TIP35B TIP35C VCE = 80 V VBE = 0 |
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