TIC201 SERIES SILICON TRIACS
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TIC201M-S (pdf) |
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TIC201D-S |
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TIC201S-S |
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TIC201 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● A RMS ● Glass Passivated Wafer ● 400 V to 700 V Off-State Voltage ● Max IGT of 5 mA Quadrant 1 MT1 MT2 TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature unless otherwise noted RATING VALUE UNIT OBSOLETE TIC201D Repetitive peak off-state voltage see Note 1 TIC201M TIC201S Full-cycle RMS on-state current at or below 85°C case temperature see Note 2 Peak on-state surge current full-sine-wave at or below 25°C case temperature see Note 3 Peak gate current Peak gate power dissipation at or below 85°C case temperature pulse width 200 µs Average gate power dissipation at or below 85°C case temperature see Note 4 Operating case temperature range Storage temperature range Lead temperature mm from case for 10 seconds VDRM IT RMS ITSM IGM PGM PG AV TC Tstg TL -40 to +110 -40 to +125 NOTES These values apply bidirectionally for any value of resistance between the gate and Main Terminal This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 100 mA/°C. This value applies for one 50-Hz full-sine-wave when the device is operating at or below the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25°C case temperature unless otherwise noted IDRM PARAMETER Repetitive peak off-state current Gate trigger current VD = rated VDRM Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† TEST CONDITIONS IG = 0 RL = 10 RL = 10 RL = 10 RL = 10 TC = 110°C tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs MIN TYP MAX UNIT |
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