TIC108N-S
TIC108N-S Datasheet
TIC108 SERIES SILICON CONTROLLED RECTIFIERS
| Part | Datasheet |
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TIC108N-S |
TIC108N-S (pdf) |
| Related Parts | Information |
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TIC108D-S |
TIC108D-S |
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TIC108M-S |
TIC108M-S |
| PDF Datasheet Preview |
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| TIC108 SERIES SILICON CONTROLLED RECTIFIERS 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 1 mA This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature unless otherwise noted RATING VALUE UNIT TIC108D OBSOLETE Repetitive peak off-state voltage see Note 1 TIC108M TIC108S TIC108N TIC108D TIC108M TIC108S TIC108N Continuous on-state current at or below 80°C case temperature see Note 2 Average on-state current 180° conduction angle at or below 80°C case temperature see Note 3 Surge on-state current see Note 4 Peak positive gate current pulse width 300 µs Peak gate power dissipation pulse width 300 µs Average gate power dissipation see Note 5 Operating case temperature range Storage temperature range VDRM VRRM IT RMS IT AV ITSM IGM PGM PG AV TC Tstg 600 700 800 400 600 700 800 20 -40 to +110 -40 to +125 A W °C °C Lead temperature mm from case for 10 seconds TIC108 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDRM Repetitive peak off-state current |
| More datasheets: B81130B1223M | B81130C1474M | 232SPOP4 | CS48-35N | CS48-35M | CS48-35P | CS48-35D | CS48-35B | CS48-35PB | TIC108D-S |
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