BUX84-S

BUX84-S Datasheet

BUX84 NPN SILICON POWER TRANSISTOR

Part	Datasheet
BUX84-S	BUX84-S (pdf)

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BUX84 NPN SILICON POWER TRANSISTOR 40 W at 25°C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current Typical tf = 200 ns at 25°C This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING Collector-base voltage IE = 0 VCBO OBSOLETE Collector-emitter voltage VBE = 0 Collector-emitter voltage IB = 0 Continuous collector current Peak collector current see Note 1 Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1 This value applies for tp 2 ms, duty cycle VCES VCEO IC ICM Ptot Tj Tstg VALUE 800 400 2 3 40 -65 to +150 -65 to +150 UNIT V A W °C °C BUX84 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter VCEO sus sustaining voltage IC = A L = 25 mH see Note 2 ICES IEBO Collector-emitter cut-off current Emitter cut-off current VCE = 800 V VCE = 800 V VEB = 5 V VBE = 0 VBE = 0 IC = 0 TC = 125°C Forward current transfer ratio VCE = 5 V IC = A see Notes 3 and 4 VCE sat VBE sat Collector-emitter saturation voltage Base-emitter saturation voltage

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BUX84 NPN SILICON POWER TRANSISTOR
40 W at 25°C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current Typical tf = 200 ns at 25°C

This series is obsolete and not recommended for new designs.

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRACA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

Collector-base voltage IE = 0

VCBO

OBSOLETE Collector-emitter voltage VBE = 0

Collector-emitter voltage IB = 0 Continuous collector current Peak collector current see Note 1 Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range

NOTE 1 This value applies for tp 2 ms, duty cycle

VCES VCEO

IC ICM Ptot Tj Tstg

VALUE
800 400
2 3 40 -65 to +150 -65 to +150

UNIT

V A W °C °C

BUX84 NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-emitter VCEO sus sustaining voltage

IC = A L = 25 mH
see Note 2

ICES IEBO

Collector-emitter cut-off current Emitter cut-off current

VCE = 800 V VCE = 800 V

VEB = 5 V

VBE = 0 VBE = 0

IC = 0

TC = 125°C

Forward current
transfer ratio

VCE = 5 V IC = A
see Notes 3 and 4

VCE sat VBE sat

Collector-emitter saturation voltage Base-emitter saturation voltage

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Datasheet ID: BUX84-S 522145