FJV3109RMTF
FJV3109RMTF Datasheet
FJV3109R
| Part | Datasheet |
|---|---|
FJV3109RMTF |
FJV3109RMTF (pdf) |
| PDF Datasheet Preview |
|---|
| FJV3109R FJV3109R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJV4109R Marking 2 1 SOT-23 Base Emitter Collector Equivalent Circuit C NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz Current Gain Bandwidth Product VCE=10V, IC=5mA Input Resistor Value 40 5 100 200 150 -55 ~ 150 Units V mA mW °C °C Min. 40 100 Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJV3109R Typical Characteristics hFE, DC CURRENT GAIN 10000 1000 V = 5V CE R = 4.7K I [mA], COLLECTOR CURRENT Figure DC current Gain 400 350 300 250 200 150 100 Ta[oC], AMBIENT TEMPERATURE Figure Power Derating |
| More datasheets: ACT8935 | CY28339ZXC | CY28339ZXCT | CY8CTMA120-56LWXA | CY8CTMA120-56LWXAT | 61127-0550CLF | 61127-0543CLF | 61127-0043CLF | 61127-0022BLF | 61127-0050CLF |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJV3109RMTF Datasheet file may be downloaded here without warranties.