BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS
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BDW63C-S (pdf) |
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BDW63D-S |
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BDW63B-S |
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BDW63A-S |
PDF Datasheet Preview |
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BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D ● 60 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 2 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING VALUE UNIT BDW63 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 see Note 1 Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range BDW63A BDW63B BDW63C BDW63D BDW63 BDW63A BDW63B BDW63C BDW63D VCBO VCEO VEB IC IB Ptot Tj Operating temperature range Tstg Operating free-air temperature range -65 to +150 -65 to +150 -65 to +150 NOTES These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = 5 mA, RBE = 100 VBE off = 0, RS = VCC = 20 V. PRODUCT INFORMATION BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX BDW63 Collector-emitter V BR CEO breakdown voltage IC = 30 mA IB = 0 |
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