BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
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BDT60B-S (pdf) |
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BDT60-S |
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BDT60C-S |
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BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5V, 3 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BDT60 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 1 Continuous device dissipation at or below 25°C free air temperature see Note 2 Operating junction temperature range Storage temperature range Operating free-air temperature range BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C NOTES Derate linearly to 150°C case temperature at the rate of W/°C. VCBO VCEO VEBO IC IB Ptot Tj Tstg TA Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -4 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V A W °C °C °C PRODUCT INFORMATION BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX BDT60 Collector-emitter V BR CEO breakdown voltage IC = -30 mA IB = 0 see Note 3 BDT60A BDT60B -80 -100 BDT60C -120 VCE = -30 V IB = 0 BDT60 ICEO Collector-emitter cut-off current |
More datasheets: CRSH2-5 TR | CRSH2-4 TR | CRSH2-2 TR | CRSH2-10 TR | CRSH2-6 BK | CRSH2-2 BK | CRSH2-4 BK | 95-21SUBC/S400-A6/TR10 | BDT60-S | BDT60C-S |
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