BDT60-S

BDT60-S Datasheet

BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS

Part	Datasheet
BDT60-S	BDT60-S (pdf)

Related Parts	Information
BDT60C-S	BDT60C-S
BDT60B-S	BDT60B-S

PDF Datasheet Preview
BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5V, 3 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BDT60 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 1 Continuous device dissipation at or below 25°C free air temperature see Note 2 Operating junction temperature range Storage temperature range Operating free-air temperature range BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C NOTES Derate linearly to 150°C case temperature at the rate of W/°C. VCBO VCEO VEBO IC IB Ptot Tj Tstg TA Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -4 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V A W °C °C °C PRODUCT INFORMATION BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX BDT60 Collector-emitter V BR CEO breakdown voltage IC = -30 mA IB = 0 see Note 3 BDT60A BDT60B -80 -100 BDT60C -120 VCE = -30 V IB = 0 BDT60 ICEO Collector-emitter cut-off current

PDF Datasheet Preview

BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C
● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5V, 3 A

This series is obsolete and not recommended for new designs.

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRACA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

BDT60

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage IB = 0

Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 1 Continuous device dissipation at or below 25°C free air temperature see Note 2 Operating junction temperature range Storage temperature range Operating free-air temperature range

BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C

NOTES Derate linearly to 150°C case temperature at the rate of W/°C.

VCBO

VCEO

VEBO IC IB Ptot Tj Tstg TA

Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

VALUE
-60 -80 -100 -120 -60 -80 -100 -120 -5 -4 50 2 -65 to +150 -65 to +150 -65 to +150

UNIT

V A W °C °C °C

PRODUCT INFORMATION

BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BDT60

Collector-emitter V BR CEO breakdown voltage

IC = -30 mA IB = 0
see Note 3

BDT60A BDT60B
-80 -100

BDT60C
-120

VCE = -30 V IB = 0

BDT60

ICEO

Collector-emitter cut-off current

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Datasheet ID: BDT60-S 522119